Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

Bipolar Transistor

AM/FM-IF/MPX Tuner System for Radio-Casette Recorders, Music Centers

Overview The LA1805 is a characteristics-improved version of the LA1810, with the same pin assignment and package as those of the LA1810. Improvements are made on the following point : • Separation (35dB→48dB) and its dependence on free running frequency (Sep – fF Characteristic on page 4).

1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in systems such as Japan’s PHS, Europe’s DECT and the emerging North Americ

Integrated Circuit Recording Video Signal Processing Circuit

Description: The NTE1805 is an integrated circuit in a 28–Lead DIP type package designed for use in VCR recording video signal processing. Features: • Dynamic Emphasis Characteristics: 5.5dB (at f = 1MHz, input level = –20dB) • Built–In Carrier Interleaving Circuit • Built–In Low

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages