Description

The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features

• Very low collector-to-emitter saturation voltage

• Fast switching speed

• High current gain characteristic

• Large current capability

• Pb-free package

Applications

• CCFL drivers

• Voltage regulators

• Relay drivers

• High efficiency low voltage switching applications