4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr