可控硅

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

4A four-quadrant triac

product features Silicon bidirectional device with NPNPN five-layer structure P-type through diffusion isolation Taier Glass Purification Process backside multilayer metal electrode High operating junction temperature; strong commutation capability High voltage change rate dV/dt High curr

Glass passivated triacs in a plastic envelope

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