Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

门极灵敏型单向可控硅

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

SCRs

Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. • Sensitive gate\n• Direct triggering from low power drivers and logic ICs;

isc Thyristors

APPLICATIONS Mesa glass passivation technology； Have high blocking voltage and high temperature stability cleaner； Electric tools such as motor speed controller； Solid state relay； Heating controller (temperature)； Other phase control circuit

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices feature a gate-cathode reverse breakdown voltage specification. They can be interfaced d

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

SCR

文件：196.64 Kbytes Page：12 Pages

SCR

文件：196.41 Kbytes Page：12 Pages

Thyristors logic level

文件：27.02 Kbytes Page：1 Pages

封装/外壳：SOT-82 包装：散装 描述：SCR 500V 4A SOT82-3 分立半导体产品 晶闸管 - SCR

THYRISTOR

THYRISTOR

文件：216 Kbytes Page：4 Pages

SCR

文件：196.59 Kbytes Page：12 Pages

封装/外壳：SOT-82 包装：管件 描述：SCR 600V 4A SOT82-3 分立半导体产品 晶闸管 - SCR

SCR

文件：203.63 Kbytes Page：13 Pages

HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

VHF variable capacitance diode

文件：54.75 Kbytes Page：8 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages