Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits

SCRs

Planar passivated SCR with sensitive gate in a SOT223 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. • Sensitive gate\n• Planar passivated for voltage ruggedness and reliability\n• Direct triggering from low power drivers and logic ICs\n• Surface mountable package;

SCR

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封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：SCR 600V 1A SC73 分立半导体产品 晶闸管 - SCR

HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

VHF variable capacitance diode

文件：54.75 Kbytes Page：8 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages