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位置：首页 > IC中文资料第1087页 > BT139-800

BT139-800价格

参考价格：￥2.0191

型号：BT139-800,127 品牌：NXP 备注：这里有BT139-800多少钱，2026年最近7天走势，今日出价，今日竞价，BT139-800批发/采购报价，BT139-800行情走势销售排行榜，BT139-800报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BT139-800

丝印代码：BT139-800；4Quadrants Triacs

General Description High current density due to mesa technology .the BT139 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, Rectifier-fed DC inductive loads e.g.DC motors and solenoids , mo

ADV

爱德微

BT139-800

Triacs

GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating an

PHILIPS

飞利浦

BT139-800

TRIACS

FEATURE Glass passivated triacs in a plastic TO220 package. They are intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic ligh

COMSET

BT139-800

4Q Triac

文件：289.14 Kbytes Page：13 Pages

WEEN

瑞能半导体

BT139-800

isc Triacs

文件：119.02 Kbytes Page：1 Pages

ISC

无锡固电

BT139-800

可控硅

LXWIC

力芯微电子

BT139-800B

丝印代码：BT139-800B；4Quadrants Triacs

General Description High current density due to mesa technology .the BT139 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, Rectifier-fed DC inductive loads e.g.DC motors and solenoids , mo

ADV

爱德微

BT139-800-B

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-BW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-BW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-C

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-CW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-CW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-D

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-E

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800F

Triacs

GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating an

PHILIPS

飞利浦

BT139-800-F

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800G

Triacs

GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating an

PHILIPS

飞利浦

BT139-800G

Thyristor Product Catalog

General Description These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V. Features • Electrically-isolated packages • Glass-passivated junctions •

TECCOR

BT139-800G

High blocking voltage capability

ETC

知名厂家

BT139-800-G

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-SW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800-SW

16A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BT139, 16A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blockin

LUGUANG

鲁光电子

BT139-800D

可控硅

JSMSEMI

杰盛微

BT139-800D-TO-263

双向可控硅

ETC

知名厂家

BT139-800E

isc Triacs

文件：243.85 Kbytes Page：2 Pages

ISC

无锡固电

BT139-800E

Triacs sensitive gate

文件：48.79 Kbytes Page：6 Pages

PHILIPS

飞利浦

BT139-800E

BT139 series E Triacs; sensitive gate

ETC

知名厂家

BT139-800E

4Q Triac

文件：288.78 Kbytes Page：13 Pages

WEEN

瑞能半导体

BT139-800E

Triacs sensitive gate

文件：44.92 Kbytes Page：6 Pages

PHILIPS

飞利浦

BT139-800E

Glass passivated triacs in a plastic

文件：762.98 Kbytes Page：4 Pages

KERSEMI

BT139-800E,127

封装/外壳：TO-220-3 包装：管件 描述：TRIAC SENS GATE 800V 16A TO220AB 分立半导体产品 晶闸管 - TRIAC

WEEN

瑞能半导体

BT139-800E-127

BT139 series E Triacs; sensitive gate

ETC

知名厂家

BT139-800G

isc Thyristors

文件：221.3 Kbytes Page：1 Pages

ISC

无锡固电

BT139-800G

4Q Triac

文件：289.11 Kbytes Page：13 Pages

WEEN

瑞能半导体

BT139-800G,127

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRIAC 800V 16A TO220AB 分立半导体产品 晶闸管 - TRIAC

WEEN

瑞能半导体

BT139-800H

Triacs high noise immunity

文件：49.71 Kbytes Page：6 Pages

PHILIPS

飞利浦

BT139-800H

Triacs high noise immunity

文件：45.83 Kbytes Page：6 Pages

PHILIPS

飞利浦

BT139-800产品属性

  • 类型

    描述

  • 型号

    BT139-800

  • 功能描述

    双向可控硅 RAIL TRIAC

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 开启状态

    RMS

  • 电流(It_RMS)

    16 A

  • 不重复通态电流

    120 A 额定重复关闭状态电压

  • VDRM

    600 V

  • 关闭状态漏泄电流（在VDRM_IDRM下）

    5 uA

  • 开启状态电压

    保持电流（Ih

  • 最大值）

    45 mA

  • 栅触发电压(Vgt)

    1.3 V

  • 栅触发电流(Igt)

    1.75 mA

  • 安装风格

    Through Hole

  • 封装/箱体

    TO-220AB

BT139-800供应商更多...

更新时间：2026-3-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
BT139-800
恩XP
24+
标准封装
46048
全新原装正品/价格优惠/质量保障
询价
深圳市纳艾斯科技有限公司
BT139-800
恩XP
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市华斯顿科技有限公司
BT139-800G
PHI
25+23+
TO-220
16665
绝对原装正品全新进口深圳现货
询价
深圳市向鸿伟业电子有限公司
BT139-800F
PHI
2402+
TO220-3
8324
原装正品!实单价优!
询价
深圳市恒创达实业有限公司
BT139-800
恩XP
17+
TO-220
6200
100%原装正品现货
询价
深圳市勤思达科技有限公司
BT139-800E
恩XP
24+
N/A
8000
全新原装正品,现货销售
询价
深圳市一线半导体有限公司
BT139-800
24+
700
询价
洪芯国际半导体（深圳）有限公司
BT139-800G
恩XP
26+
TO-252
86720
全新原装正品价格最实惠 假一赔百
询价
深圳诚思涵科技有限公司
BT139-800E
恩XP
18+
TO-220
85600
保证进口原装可开17%增值税发票
询价
君宇国际实业有限公司
BT139-800E
恩XP
4258
原装正品
询价

BT139-800芯片相关品牌

BT139-800规格书下载地址

BT139-800参数引脚图相关

BT139-800数据表相关新闻

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