12 A four-quadrant triacs, sensitive gate, insulated

isc Thyristors

DESCRIPTION ·With TO-263( D2PAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load

4Q Triac

General description Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate series E triac can be interfaced directly to microc

12 A four-quadrant triacs, sensitive gate, insulated

4-Quadrant Triacs

Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate \"series E\" triac can be interfaced directly to microcontrollers, logic i • 2500 V RMS isolation voltage capability\n• Direct interfacing to low power gate drivers and microcontrollers\n• Industry standard TO-220 package for ease of handling\n• Planar passivated for voltage ruggedness and reliability\n• Triggering in all four quadrants;

4-Quadrant Triacs

Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate \"series E\" triac can be interfaced directly to microcontrollers, logic i • 2500 V RMS isolation voltage capability\n• Direct interfacing to logic level ICs\n• Direct interfacing to low power gate drivers and microcontrollers\n• High blocking voltage capability\n• Industry standard TO-220 package for ease of handling\n• Isolated mounting base\n• Planar passivated for volt;

12 A four-quadrant triacs, sensitive gate, insulated

4Q Triac

General description Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate series E triac can be interfaced directly to microc

封装/外壳：TO-220-3 隔离片 包装：管件 描述：TRIAC SENS GATE 600V 12A TO220AB 分立半导体产品 晶闸管 - TRIAC

封装/外壳：TO-220-3 隔离片 包装：管件 描述：TRIAC SENS GATE 800V 12A TO220AB 分立半导体产品 晶闸管 - TRIAC

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava