Thyristor Product Catalog

General Description These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V. Features • Electrically-isolated packages • Glass-passivated junctions •

Triacs

GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

4Q Triac

General description Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. Features and benefits • High blocking voltage capability • Less sensitive gate for improved

Triacs

GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

4Q Triac

General description Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. Features and benefits • High blocking voltage capability • Less sensitive gate for improved

isc Triacs

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：TRIAC 600V 4A DPAK 分立半导体产品 晶闸管 - TRIAC

4A SERIES TRIACS

Features ◇The LGE BT136S, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocki

4A SERIES TRIACS

Features ◇The LGE BT136S, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocki