SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv/dtrated • Available with VGS(th) indicator on reel • Qualified according to AEC Q101 • 100 lead-free; Halogen-free; RoHS compliant

Small Signal MOSFET

英飞凌是少数向全球提供耗尽型 MOSFET 半导体制造商之一。\n 应用范围包括供电电源启动电源、过压保护、涌入电流限制器、脱机基准电压。使用单一部件就可能实现简单的电流调节。所有产品均适用于汽车应用。为满足特殊要求，可在卷轴上使用带有 VGS(th) 指示器的耗尽型 MOSFET。 • 耗尽型\n• dv/dt额定\n• 可在卷轴上使用 VGS(th) 指示器\n• 无卤；无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n\n优势:;

SIPMOS Small-Signal-Transistor

文件：314.06 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：201.62 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：314.06 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：201.62 Kbytes Page：9 Pages

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

POWER TRANSISTOR NPN SILICON

Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Ratin

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

Silicon epitaxial planar type

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