N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

SIPMOS Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead Free/RoHS Compliant (Note 4) • Green Device (Note 5 and 6)

丝印代码：138；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged,reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as sm

Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-323 Package • Marking Code: SS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The BSS138W is available in SC 70 Package Type FEATURES  Low T hreshold Voltage (V GS(th) th): 0

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. Application Switching circuits Low-side loadswitch Relay driver

丝印代码：SS；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

丝印代码：SS；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

丝印代码：J1；N-Channel POW

Description: Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: Simple Drive Requirement Small Package Outline

丝印代码：SS；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

N-Channel Enhancement Mode MOSFET

FEATURE - High density cell design for extremely low RDS(on) - Rugged and Relaible APPLICATION -Direct Logic-Level Interface: TTL/CMOS -Drivers: Relays, Solenoids, Lamps, Hammers,Display, -Memories, Transistors, etc. -Battery Operated Systems -Solid-State Relays

Nch 60V 310mA, SOT-323, 小信号MOSFET

N 沟道逻辑电平增强型场效应晶体管 50V，210mA，3.5Ω

N-CHANNEL ENHANCEMENT MODE MOSFET

丝印代码：SWs；SIPMOS Small-Signal-Transistor

文件：357.46 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：317.46 Kbytes Page：9 Pages

N-Channel POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：115.2 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead Free/RoHS Compliant (Note 4) • Green Device (Note 5 and 6)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

丝印代码：VDA；Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. 6) AEC-Q101 Qualified. Application Switching circuits Low-side loadswitch Relay driver

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. 6) AEC-Q101 Qualified. Application Switching circuits Low-side loadswitch Relay driver

丝印代码：K38；MOSFET

Features - Fast switching speed. - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Low input/output leakage.

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

丝印代码：K38；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

丝印代码：K38；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

丝印代码：SS；SOT-523 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

200 mAmps, 50 Volts

N–Channel SOT-323 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications • M

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-323 Package • Marking Code: SS • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

SIPMOS Small-Signal-Transistor

文件：317.46 Kbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：115.2 Kbytes Page：6 Pages

SIPMOS Small-Signal-Transistor

文件：357.46 Kbytes Page：9 Pages

50V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：216.49 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：121.91 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：115.2 Kbytes Page：6 Pages

SIPMOS Small-Signal-Transistor

文件：317.46 Kbytes Page：9 Pages

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

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Aluminum Capacitors Axial Miniature, Long-Life

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