丝印代码：SS；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

场效应晶体管

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • BVDSS > 50V • RDS(on) ≤ 3.5Ω @ VGS= 5V • Maximum continuous drain current ID = 200mA • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

包装：卷带（TR） 描述：MOSFET N-CH SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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