丝印代码：NZ；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

丝印代码：NZt；Load Switch

Features VDS (V) = 60V RDS(ON)

丝印代码：NZt；MOSFET

Features RDS(ON)

60 V, 320 mA dual N-channel Trench MOSFET

60 V, 320 mA dual N-channel Trench MOSFET

60 V, 320 mA dual N-channel Trench MOSFET

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1 5/16 (33.3 mm) Industrial Single Turn, Bushing Mount, Conductive Plastic Potentiometer

FEATURES • Center tap available • Continuous rotation and mechanical stops both standard • Suitable model for all types of industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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