N-Channel Depletion-Mode MOSFET Transistors

[Siliconix] Features ● High Breakdown Voltage: 260 V ● Normally “On” Low rDS Switch: 3.5 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffer ● Hi

SIPMOS Small-Signal Transistor(N channel Depletion mode High dynamic resistance)

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N-Channel SIPMOS Small-Signal Transistor

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Precision Reference

文件：165.31 Kbytes Page：10 Pages

Precision Reference

文件：165.31 Kbytes Page：10 Pages

Precision Reference

文件：165.31 Kbytes Page：10 Pages

Precision Reference

文件：165.31 Kbytes Page：10 Pages