SIPMOS짰 Small-Signal-Transistor

Features • N-channel • Depletion mode • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

Small Signal MOSFET

英飞凌是少数向全球提供耗尽型 MOSFET 半导体制造商之一。\n 应用范围包括供电电源启动电源、过压保护、涌入电流限制器、脱机基准电压。使用单一部件就可能实现简单的电流调节。所有产品均适用于汽车应用。为满足特殊要求，可在卷轴上使用带有 VGS(th) 指示器的耗尽型 MOSFET。 • 耗尽型\n• dv/dt额定\n• 可在卷轴上使用 VGS(th) 指示器\n• 无卤；无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n\n优势:;

HV MOSFET

SIPMOS Small-Signal-Transistor

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丝印代码：SHs；SIPMOS® Small-Signal-Transistor

Features • N-channel • Depletion mode • dv/dt rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

N-CHANNEL DEPLETION MODE MOSFET

This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. •N-Channel\n•ESD Protected\n•Depletion Mode\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen and Antimony Free. “Green” Device\n•For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified faciliti;

SIPMOS Small-Signal-Transistor

文件：262.77 Kbytes Page：9 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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