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BSP晶体管资料

  • BSP15别名：BSP15三极管、BSP15晶体管、BSP15晶体三极管

  • BSP15生产厂家：

  • BSP15制作材料：Si-PNP

  • BSP15性质：表面帖装型 （SMD）_低频或音频放大 （LF）_开关管

  • BSP15封装形式：贴片封装

  • BSP15极限工作电压：200V

  • BSP15最大电流允许值：1A

  • BSP15最大工作频率：>15MHZ

  • BSP15引脚数：3

  • BSP15最大耗散功率：1.5W

  • BSP15放大倍数：

  • BSP15图片代号：H-99

  • BSP15vtest：200

  • BSP15htest：15000100

  • BSP15atest：1

  • BSP15wtest：1.5

  • BSP15代换 BSP15用什么型号代替：

BSP价格

参考价格：￥3.8000

型号：BSP-0 品牌：Neutrik 备注：这里有BSP多少钱，2024年最近7天走势，今日出价，今日竞价，BSP批发/采购报价，BSP行情走势销售排行榜，BSP报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BSP

Precision Potentiometer

文件：92.14 Kbytes Page：3 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
BSP

Space-saving Two-wire Signal Conditioners B-UNIT

文件：104.39 Kbytes Page：2 Pages

MSYSTEMM-System Co., Ltd.

爱模爱模系统有限公司

MSYSTEM
BSP030

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES •Highspeedswitching •Nosecondarybreakdown •Verylowon-stateresistance. APPLICATIONS •Motorandactuatordrivers •Powermanagement •Synchronizedrectification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP030

N-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •AEC-Q101Qualifiedc •100RgandUISTested

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
BSP030

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSP030inSOT223. 2.Features nTrenchMOS™technology nFastswitching nLowon-stateresistance nLogiclevelcompatible nSurfacemountpackage. 3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP090

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES •Highspeedswitching •Nosecondarybreakdown •Verylowon-stateresistance. APPLICATIONS •Motorandactuatordrivers •Powermanagement •Synchronizedrectification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP100

N-channel enhancement mode TrenchMOS transistor

VDSS=30V ID=6A RDS(ON)≤100mΩ(VGS=10V) RDS(ON)≤200mΩ(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fasts

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP100

N-channel enhancement mode TrenchMOSÔ transistor

FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- •Motorandrel

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP106

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES •VerylowRDS(on) •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP107

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelope. Intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdriverswitching. FEATURES •DirectinterfacetoC-MOS,TTL,etc.due

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP108

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •Nosecondarybreakdown

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP110

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseintelephoneringercircuitsandforapplicationinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching •No

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP110

N-Channel 100-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
BSP110

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSP110inSOT223. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSurfacemountpackage. 3.Applications nRela

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP120

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP121

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP122

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223packageandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-spe

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP122

N-Channel 200 V (D-S) MOSFET

FEATURES •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
BSP122

N-channel enhancement mode vertical D-MOS transistor

FEATURES ·DirectinterfacetoC-MOS,TTL, etc. ·High-speedswitching ·Nosecondarybreakdown. DESCRIPTION N-channelenhancementmode verticalD-MOStransistorina SOT223packageandintendedfor useasalinecurrentinterruptorin telephonesetsandforapplicationsin relay,high-

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP123

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP123

SIPMOS Small-Signal-Transistor

Feature •N-Channel •Enhancementmode •LogicLevel •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP125

SIPMOS Small-Signal Transistor (N channel Enhancement mode)

SIPMOSSmall-SignalTransistor *Nchannel *Enhancementmode *VGS(th)=1.5...2.5V

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP125

SIPMOS Power-Transistor

*N-Channel *Enhancementmode *LogicLevel *dv/dtrated *Pb-freeleadplating;RoHScompliant *Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP126

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseasalineinterrupterintelephonesetsandforapplicationinrelay,high-speedandline-transformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitc

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP126

N-channel enhancement mode vertical D-MOS transistor

FEATURES ·DirectinterfacetoC-MOS,TTL,etc. ·High-speedswitching ·Nosecondarybreakdown. APPLICATIONS ·Linecurrentinterruptorintelephonesets ·Relay,high-speedandlinetransformerdrivers. DESCRIPTION N-channelenhancementmodeverticalD-MOStransistor inaminiatureSOT2

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP127

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelopeandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitch

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP128

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP129

SIPMOS Small-Signal-Transistor

SIPMOS®Small-Signal-Transistor Features •N-channel •Depletionmode •dv/dtrated •AvailablewithVGS(th)indicatoronreel •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP129

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS®Small-SignalTransistor ●VDS240V ●ID0.2A ●RDS(on)20Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP130

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP130

N-channel enhancement mode vertical D-MOS transistor

FEATURES ·DirectinterfacetoC-MOS,TTL,etc. ·High-speedswitching ·Nosecondarybreakdown. APPLICATIONS ·Linecurrentinterruptorintelephonesets ·Relay,high-speedandlinetransformerdrivers. DESCRIPTION N-channelenhancementmodeverticalD-MOStransistor inaSOT223package

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BSP135

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS®Small-SignalTransistor ●VDS600V ●ID0.100A ●RDS(on)60Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP135

SIPMOS Small-Signal-Transistor

SIPMOS®Small-Signal-Transistor Features •N-channel •Depletionmode •dv/dtrated •AvailablewithVGS(th)indicatoronreel •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP145

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223plasticSMDpackage. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •Highspeedswitching •Nosecondarybreakdown. APPLICATIONS •Intendedforapplicationsinrelay,highspeedandlinetransformerdrivers.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP149

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

●VDS200V ●ID0.48A ●RDS(on)3.5Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP149

SIPMOS Small-Signal-Transistor

Features •N-channel •Depletionmode •dv/dtrated •AvailablewithVGS(th)indicatoronreel •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP149

N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES Vos=200V Ib=10A@Ves=10V Rosion)£1.35Q@Ves=10V SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSP15

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

PNPSILICONPLANARHIGHVOLTAGETRANSISTOR FEATURES *HighVCEO *Lowsaturationvoltage

Zetex

Zetex Semiconductors

Zetex
BSP152

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP16

PNP high-voltage transistor

DESCRIPTION PNPhigh-voltagetransistorinaSOT223plasticpackage. NPNcomplements:BSP19andBSP20. FEATURES •Highvoltage(max.350V). APPLICATIONS •Switchingandamplification •Especiallyusedintelephonyandautomotive applications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BSP16

PNP High-Voltage Transistor

Features ●Highvoltage(max.350V).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BSP16

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES *HighVCEO *Lowsaturationvoltage COMPLEMENTARYTYPE:-BSP19 PARTMARKINGDETAIL:-BSP16

Zetex

Zetex Semiconductors

Zetex
BSP16T1

SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

SOT-223PackageHighVoltageTransistor PNPSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola
BSP16T1

High Voltage Transistors PNP Silicon

SOT-223PackageHighVoltageTransistor PNPSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BSP16T1G

High Voltage Transistors PNP Silicon

SOT-223PackageHighVoltageTransistor PNPSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BSP16T1G

High Voltage Transistors

HighVoltageTransistors PNPSilicon Features •Pb-FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BSP17

SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP170

SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated)

SIPMOS®Small-SignalTransistor •Pchannel •Enhancementmode •Avalancherated •VGS(th)=-2.1...-4.0V

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP170

-60V P-Channel MOSFET

Features •Enhancementmode •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW
BSP170P

SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)

SIPMOS®PowerTransistor ●P-Channel ●Enhancementmode ●Avalancherated ●dv/dtrated

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP170P

SIPMOS Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP170P

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Application ●DC-DCConverters. ●LoadSwitch. ●PowerManagement.

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
BSP170P

-60V P-Channel MOSFET

Features •Enhancementmode •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW
BSP170PE6327T

SIPMOS짰 Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP170PL6327

XTR111 Demonstration Fixture Users Guide

2HardwareFeatures ThissectiondescribesthehardwarefeaturesfoundontheXTR111EVM. 2.1XTR111EVM TheXTR111EVMisusedforthebasicfunctionalevaluationoftheXTR111.TheEVMprovidesthe followingfeatures: •EasyhandlingofthesmallDFNpackage.TheDFNdeviceisalreadysoldered

TITexas Instruments

德州仪器美国德州仪器公司

TI
BSP170P-L6327

SIPMOS짰 Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP171

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)

SIPMOS®Small-SignalTransistor •Pchannel •Enhancementmode •LogicLevel •Avalancherated •VGS(th)=-0.8...-2.0V

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS
BSP171P

SIPMOS Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Logiclevel •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP171P

SIPMOS Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Logiclevel •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BSP171P-L6327

SIPMOS Small-Signal-Transistor

Features •P-Channel •Enhancementmode •Logiclevel •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BSP产品属性

  • 类型

    描述

  • 型号

    BSP

  • 制造商

    TE Connectivity

BSP供应商更多...

更新时间：2024-6-6 23:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳诚思涵科技有限公司
BSP89,115
NEXPERIA/安世
23+
NA
68000
订货原装进口假一罚十
询价
深圳市高捷芯城科技有限公司
BSP-15IOV1EM
BYD(比亚迪)
23+
插件
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市凌旭科技有限公司
BSP297
INFINEON
2019+
SOT223-4
50000
凌旭科技,十年品质,只做原装,假一罚十,公司可开增值税发票,欢迎采购! 谢先生 电话:0755-83221677 13682335883/微信同号,QQ:1505910091
询价
深圳市纳艾斯科技有限公司
BSP77E6433
INFINEON/英飞凌
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市纳睿斯电子科技有限公司
BSP742R
Infineon
30000
原装现货,支持实单
询价
深圳市金芯世纪电子有限公司
BSP89H6327
INFINEON/英飞凌
22+
SOT223
100000
代理渠道/只做原装/可含税
询价
深圳市威雅利发展有限公司
BSP92P
INFINEON
11+
SOT223
7618
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科芯源微电子有限公司
BSP220
NXP/恩智浦
24+
SOT223
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市华睿芯科技有限公司
BSP350
INFINEON
23+
SOT223
20000
原厂原装正品现货
询价
深圳市纳立科技有限公司
BSP92PL6327XT
三年内
1983
纳立只做原装正品13590203865
询价

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