位置：首页 > IC中文资料第637页 > BSM150GAL120DN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) 文件：81.21 Kbytes Page：5 Pages | SIEMENS 西门子 |   | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) | Infineon 英飞凌 | | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) | Infineon 英飞凌 | | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) 文件：80.48 Kbytes Page：5 Pages | SIEMENS 西门子 | | ||
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 | |
BSM150GAL120DN产品属性
- 类型
描述
- 型号
BSM150GAL120DN
- 功能描述
IGBT 模块 1200V 150A CHOPPER
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIEMENS型号(耐压2U600/12 |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
EUPEC |
24+ |
module |
6000 |
全新原装正品现货 假一赔佰 |
|||
EUPEC/欧派克 |
25+ |
原厂原封可拆样 |
64586 |
百分百原装现货 实单必成 |
|||
EUPEC/欧派克 |
模块 |
1000 |
一级代理,全新原装进口正品现货! |
||||
EUPEC |
23+ |
150A1200 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
SEMIKRON |
NEW |
模块 |
3562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
EUPEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
INFINEON/英飞凌 |
23+ |
module |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
EUPEC |
22+ |
模块 |
8000 |
原装正品支持实单 |
|||
EUPEC |
25+ |
150A/1200V/I |
50 |
全新原装、诚信经营、公司现货销售 |
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BSM150GAL120DN规格书下载地址
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深圳好佳好科技有限公司 电话：0755-82559658 QQ：1728142002
2019-10-17
DdatasheetPDF页码索引
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