位置：首页 > IC中文资料第637页 > BSM150GAL12
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga | Infineon 英飞凌 |   | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) 文件：81.21 Kbytes Page：5 Pages | SIEMENS 西门子 | | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) | Infineon 英飞凌 | | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) 文件：80.48 Kbytes Page：5 Pages | SIEMENS 西门子 | | ||
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) | Infineon 英飞凌 | | ||
Target Data 文件：424.25 Kbytes Page：3 Pages | Semikron 赛米控丹佛斯 | | ||
SEMITRANS 文件：414.79 Kbytes Page：5 Pages | Semikron 赛米控丹佛斯 | |
BSM150GAL12产品属性
- 类型
描述
- 型号
BSM150GAL12
- 功能描述
IGBT 晶体管 1200V 150A CHOPPER
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
150A,1200V |
20000 |
全新原装假一赔十 |
|||
EUPEC |
24+ |
module |
6000 |
全新原装正品现货 假一赔佰 |
|||
INFINEON |
24+ |
NA |
7000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEON |
module |
120 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
EUPEC |
23+ |
模块 |
800 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
EUPEC |
NEW |
模块 |
3562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
EUPEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
EUPEC/欧派克 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
EUPEC |
22+ |
模块 |
8000 |
原装正品支持实单 |
|||
EUPEC |
25+ |
150A/1200V/I |
50 |
全新原装、诚信经营、公司现货销售 |
BSM150GAL12芯片相关品牌
BSM150GAL12规格书下载地址
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BSM150GAL12数据表相关新闻
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2019-10-17
DdatasheetPDF页码索引
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