位置：首页 > IC中文资料第11112页 > BSB012NE2LXI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSB012NE2LXI | Metal Oxide Semiconductor Field Effect Transistor Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile( | Infineon 英飞凌 |   | |
BSB012NE2LXI | 20V-300V N-Channel Power MOSFET | Infineon 英飞凌 | | |
n-Channel Power MOSFET Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of vol | Infineon 英飞凌 | |
BSB012NE2LXI产品属性
- 类型
描述
- 型号
BSB012NE2LXI
- 制造商
Infineon Technologies AG
- 功能描述
LV POWER MOS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET 25V 1.2 Ohm 170 Amp
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3450 |
原装现货,当天可交货,原型号开票 |
|||
Infineon/英飞凌 |
24+ |
MG-WDSON-2 |
25000 |
原装正品,假一赔十! |
|||
infineon |
22+ |
MG-WDSON |
8900000 |
代理渠道/只做原装/可含税 |
|||
Infineon/英飞凌 |
21+ |
MG-WDSON-2 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
MG-WDSON |
2506 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
23+ |
WDSON-2-3 |
2492 |
正规渠道,只有原装! |
|||
Infineon(英飞凌) |
24+ |
MG-WDSON-2 |
11318 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon |
24+ |
WDSON |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
INFINEON/英飞凌 |
24+ |
WDSON-2-3 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON/英飞凌 |
23+ |
WDSON-2-3 |
20000 |
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BSB012NE2LXI规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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