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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSB012NE2LXI | Metal Oxide Semiconductor Field Effect Transistor Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile( | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
n-Channel Power MOSFET Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of vol | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
BSB012NE2LXI产品属性
- 类型
描述
- 型号
BSB012NE2LXI
- 制造商
Infineon Technologies AG
- 功能描述
LV POWER MOS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET 25V 1.2 Ohm 170 Amp
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
21+ |
CanPAK? M-size |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFINEON/英飞凌 |
24+ |
WDSON-2-3 |
5000 |
十年沉淀唯有原装 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON/英飞凌 |
24+ |
WDSON-2-3 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
INFINEON/英飞凌 |
24+ |
WDSON-2-3 |
8000 |
原装，正品 |
|||
INFINEON/英飞凌 |
24+ |
MG-WDSON-2 |
8168 |
公司现货库存,假一赔十 |
|||
Infineon |
23+ |
WDSON |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon |
24+ |
WDSON |
9000 |
只做原装正品 有挂有货 假一赔十 |
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BSB012NE2LXI规格书下载地址
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BSB012NE2LXI数据表相关新闻
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2019-3-7
DdatasheetPDF页码索引
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