位置：首页 > IC中文资料第11112页 > BSB012NE2LXI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSB012NE2LXI | Metal Oxide Semiconductor Field Effect Transistor Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile( | INFINEON 英飞凌 |   | |
BSB012NE2LXI | N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
n-Channel Power MOSFET Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of vol | INFINEON 英飞凌 | |
BSB012NE2LXI产品属性
- 类型
描述
- 型号
BSB012NE2LXI
- 制造商
Infineon Technologies AG
- 功能描述
LV POWER MOS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET 25V 1.2 Ohm 170 Amp
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
MG-WDSON-2 |
8168 |
公司现货库存,假一赔十 |
|||
Infineon |
23+ |
WDSON |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon/英飞凌 |
25+ |
MG-WDSON-2 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
21+ |
MG-WDSON-2 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
INFINEON/英飞凌 |
23+ |
WDSON-2-3 |
2492 |
正规渠道,只有原装! |
|||
Infineon |
24+ |
WDSON |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Infineon Technologies |
22+ |
3WDSON |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
19+ |
MG-WDSON |
2518 |
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BSB012NE2LXI规格书下载地址
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DdatasheetPDF页码索引
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