位置：首页 > IC中文资料第11112页 > BSB012NE2LXI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BSB012NE2LXI | Metal Oxide Semiconductor Field Effect Transistor Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile( | Infineon 英飞凌 |   | |
BSB012NE2LXI | 20V-300V N-Channel Power MOSFET | Infineon 英飞凌 | | |
n-Channel Power MOSFET Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of vol | Infineon 英飞凌 | |
BSB012NE2LXI产品属性
- 类型
描述
- 型号
BSB012NE2LXI
- 制造商
Infineon Technologies AG
- 功能描述
LV POWER MOS - Tape and Reel
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET 25V 1.2 Ohm 170 Amp
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3450 |
原装现货,当天可交货,原型号开票 |
|||
infineon |
22+ |
MG-WDSON |
8900000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
1222+ |
MG-WDSON |
1202 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon |
23+ |
WDSON |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon/英飞凌 |
24+ |
MG-WDSON-2 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
23+ |
MG-WDSON-2 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
24+ |
MG-WDSON-2 |
8168 |
公司现货库存,假一赔十 |
|||
INFINEON/英飞凌 |
23+ |
WDSON-2-3 |
20000 |
||||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINE0N |
21+ |
CanPAK? M-size |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
BSB012NE2LXI芯片相关品牌
BSB012NE2LXI规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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