Touch Key

The BS801B/02B/04B/06B/08B are a range of 1 to 8 key touch key devices which can detect human body contact using external touch pads. The high level of device integration enable applications to be implemented with a minimum number of external components. * Operating voltage: 2.2V~5.5V * Ultra

Touch Key

BS801B/02B/04B/06B/08B具有1到8个触摸按键，可用来检测外部触摸按键上人手的触摸动作。该系列的芯片具有较高的集成度，使用较少的外部元件便可实现触摸按键的应用。\n\n BS804B 和BS808B 还提供了一个单线串行接口，可方便与外部MCU之间的通讯，实现对芯片设置以及触摸引脚按键检测的目的。\n\n 芯片内部集成电路具有高电源电压抑制比，可减少按键检测错误的发生，这一特性保证在不利环境条件的应用中芯片仍具有很高的可靠性。此系列的触摸芯片具有自动校准功能，低待机电流，唤醒模式可选等特性，为各种触摸按键的应用提供了一种简单而又有效的实现方法。\n\n • 工作电压: 2.2V~5.5V\n• 自动校准功能\n• 高电源电压抑制比\n• One-Key或Any-Key唤醒模式\n• 开漏极NMOS输出\n• 通过引脚或串口检测按键状态;

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)