P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features ● High Input Impedance ● Fast Switching Speed ● CMOS Logic Compatible Input ● No Thermal Runaway or Secondary Breakdown

P-Channel 60-V (D-S) MOSFET

FEATURES • High-Side Switching • Low On-Resistance: 8
• Low Threshold: −1.9 V • Fast Switching Speed: 16 ns • Low Input Capacitance: 15 pF BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Switching • Easily Driven Without Buffer AP

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown

P-Channel 60-V (D-S) MOSFET

Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical

DMOS Transistors (P-Channel)

FEATURES ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

DMOS Transistor (P-Channel)

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL - SP

BS250F

PARTMARKING DETAIL - MX

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel Mosfet |

Application « Battery protection « Load switch © Power management

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

PARTMARKING DETAIL - MX

P-Channel 60-V (D-S) MOSFET

FEATURES ● TrenchFET Power MOSFET ● ESD Protected: 2000 V APPLICATIONS ● Drivers: Relays, Solenoids, Lamps, Hammers,    Displays, Memories, Transistors, etc. ● Battery Operated Systems ● Power Supply, Converter Circuits ● Motor Control

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL - SP

45 Volt VDS

FEATURES * 45 Volt VDS * RDS(on)=14Ω REFER TO ZVP2106A FOR GRAPHS

P-CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS

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P-CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS

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SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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High peak current carrying capability up to 6000A

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DC axial fans

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DC axial fans

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DC axial fans

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Commercial Composition 9mm Diameter Variable Resistors

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