Single-use ultrasonic flowmeter for liquids

FEATURES ❑ Materials of wetted parts of the flow detector: Biocompatible (FDA, USP Class VI, no TSE/BS animal derived components), gammasterilizable (up to 50 kGy) ❑ Highly clean construction without causing stress to liquids or leaving residues ❑ Wide rangeability BS04SC Range: 0 to 800 m

Conduit Accessories

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Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package. low Power Supply Voltage: 3.3V, 2.5V，1.8V Conforms to AEC-Q200 Tight symmetry (45 to 55) available Tri-state enable/disable Typical Application ● WLAN/WiMax ● Mobile Phone ● - DSC,Set-top Box,HDTV Typical Application

Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package

Features Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package. low Power Supply Voltage: 3.3V, 2.5V，1.8V Conforms to AEC-Q200 Tight symmetry (45 to 55) available Tri-state enable/disable Typical Application ● WLAN/WiMax ● Mobile Phone ● - DSC,Set-top Box,HDTV Typical Application

DMOS Transistors (P-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone su

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Low Drain-Source On-Resistance • Specially Suited for Telephone Subsets

DMOS Transistors (P-Channel)

FEATURES\nHigh breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets High breakdown voltage\nHigh input impedance\nLow gate threshold voltage\nLow drain-source ON resistance\nHigh-speed switching\nNo minority carrier storage time\nCMOS logic compatible input\nNo thermal runaway\nNo secondary breakdown\nSpecially suited for telephone subsets;

DMOS Transistors (P-Channel)

FEATURES ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

Wire-to-Board (Crimp style)

*The protected, folded beam contact provides high contact pressure with an over-stress stop feature. *Double-sided contact *Molded-in header with wide, sturdy posts *The header is available in three configurations, top, side and bottom entry.

GORE-SHIELD짰 GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.

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包装：散装 描述：STRAP BRAIDED BONDING 2HOLE 盒子，外壳，机架 机架配件

包装：散装 描述：STRAP BRAIDED BONDING 2HOLE 盒子，外壳，机架 机架配件

Gas Discharge Tube

文件：225.44 Kbytes Page：3 Pages

陶瓷气体放电管(GDT)-二极贴片系列

Bare Staple Jumper Wire

文件：20.2 Kbytes Page：1 Pages

Bare Staple Jumper Wire

文件：20.2 Kbytes Page：1 Pages

Thermocouple Terminals

文件：352.89 Kbytes Page：1 Pages

Conduit Accessories

文件：107.2 Kbytes Page：2 Pages

Conduit Accessories

文件：107.2 Kbytes Page：2 Pages