Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 4kbit(256x16bit) EEPROM

ROHM的串行EEPROM按照世界高水平为用户准备了多种容量、接口和封装形式，在世界上具有较高的市场占有率。ROHM的串行EEPROM配置有世界标准的总线形式（Microwire、I²C、SPI），而且工作电源电压范围宽（1.7 ～ 5.5V、1.8 ～ 5.5V、2.5 ～ 5.5V、3.0 ～ 3.6V），还适合采用电池供电。整个系列均是无铅产品，符合RoHS指令。 •与Microwire BUS兼容的串行EEPROM\n•工作电压范围宽: 1.8～5.5V\n•数据可擦写1,000,000次;

High Reliability Serial EEPROMs High Reliability Series

文件：1.97777 Mbytes Page：41 Pages

Microwire BUS EEPROM

文件：1.24202 Mbytes Page：39 Pages

封装/外壳：8-VSSOP，8-MSOP（0.110"，2.80mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC EEPROM 4KBIT SPI 2MHZ 8MSOP 集成电路（IC） 存储器

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing