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BR93L66价格

参考价格：￥2.4014

型号：BR93L66FJ-WE2 品牌：Rohm 备注：这里有BR93L66多少钱，2026年最近7天走势，今日出价，今日竞价，BR93L66批发/采购报价，BR93L66行情走势销售排行榜，BR93L66报价。

型号	功能描述	生产厂家企业	LOGO
BR93L66	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66	Microwire BUS 4Kbit(256 x 16bit) EEPROM	ROHM 罗姆	ROHM
BR93L66FJ-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66FVT-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66FVT-W	Microwire BUS 4kbit(256x16bit) EEPROM ROHM的串行EEPROM按照世界高水平为用户准备了多种容量、接口和封装形式，在世界上具有较高的市场占有率。ROHM的串行EEPROM配置有世界标准的总线形式（Microwire、I²C、SPI），而且工作电源电压范围宽（1.7 ～ 5.5V、1.8 ～ 5.5V、2.5 ～ 5.5V、3.0 ～ 3.6V），还适合采用电池供电。整个系列均是无铅产品，符合RoHS指令。 •与Microwire BUS兼容的串行EEPROM\n•工作电压范围宽: 1.8～5.5V\n•数据可擦写1,000,000次;	ROHM 罗姆	ROHM
BR93L66FV-W	Microwire BUS 4kbit(256x16bit) EEPROM 为支持现有客户而生产的产品。不对新设计出售此产品。 •与Microwire BUS兼容的串行EEPROM\n•工作电压范围宽: 1.8～5.5V\n•数据可擦写1,000,000次;	ROHM 罗姆	ROHM
BR93L66FV-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66F-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RFJ-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RFVJ-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RFVM-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RFVT-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RFV-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66RF-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66-W	Microwire BUS 4Kbit(256 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing	ROHM 罗姆	ROHM
BR93L66FJ-WE2	High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66FJ-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66FJ-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66F-LE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66FVT-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66FVT-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66FV-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66FV-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66FV-WE2	封装/外壳：8-LSSOP（0.173"，4.40mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC EEPROM 4KBIT SPI 2MHZ 8SSOPB 集成电路（IC）存储器	ROHM 罗姆	ROHM
BR93L66F-WE2	封装/外壳：8-SOIC（0.173"，4.40mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC EEPROM 4KBIT SPI 2MHZ 8SOP 集成电路（IC）存储器	ROHM 罗姆	ROHM
BR93L66F-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66F-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66F-WE2	High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFJ-WE2	High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFJ-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFJ-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RF-LE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFVJ-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFVJ-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RFVM-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFVM-WTR	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RFVT-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RFVT-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RFV-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RFV-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RF-WE2	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66RF-WE2	High Reliability Serial EEPROMs High Reliability Series 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66RF-WE2	High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66-W	High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66-W	High Reliability Series EEPROMs Microwire BUS 文件：1.67591 Mbytes Page：41 Pages	ROHM 罗姆	ROHM
BR93L66-W	Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages	ROHM 罗姆	ROHM
BR93L66-W	High Reliability Series EEPROMs Microwire BUS 文件：1.97777 Mbytes Page：41 Pages	ROHM 罗姆	ROHM

BR93L66产品属性

类型
描述
封装：
SOP-J8
包装数量：
2500
最小独立包装数量：
2500
包装形态：
Taping
RoHS：
Yes
Series：
BR93L-W
Density [bit]：
4K
Bit Format [Word x Bit]：
256 x 16
Vcc(Min.)[V]：
1.8
Vcc(Max.)[V]：
5.5
Circuit Current (Max.)[mA]：
3
Standby Current (Max.)[μA]：
2
Write Cycle (Max.)[ms]：
5
Input Frequency (Max.)[Hz]：
2M
Endurance (Max.)[Cycle]：
10(6)
Data Retention (Max.)[Year]：
40
I/F：
MicroWire BUS(3-Wire)
Operating Temperature (Min.)[°C]：
-40
Operating Temperature (Max.)[°C]：
85
Package Size [mm]：
4.9x6 (t=1.65)

BR93L66供应商更多...

更新时间：2026-5-14 9:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宇集芯电子有限公司	BR93L66FJ-W	ROHM	25+	N/A	90000	一级代理商进口原装现货、价格合理	询价
深圳市百诺芯科技有限公司	BR93L66FVT-WE2	ROHM/罗姆	23+	NA	2860	原装正品代理渠道价格优势	询价
现代芯城（深圳）科技有限公司	BR93L66FVT-WE2		26+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
中天科工半导体（深圳）有限公司	BR93L66F-WE2	ROHM/罗姆	25+	SOP-8	32360	ROHM/罗姆全新特价BR93L66F-WE2即刻询购立享优惠#长期有货	询价
深圳市华高宇电子有限公司	BR93L66RF-WE2	ROHM	21+		7500	SOP8 [5.00 x 6.20 x 1.71 mm]	询价
瀚佳科技(深圳)有限公司	BR93L66FJ-WE2	Rohm Semiconductor	24+	8-SOP-J	56200	一级代理/放心采购	询价
深圳市昌和盛利电子有限公司	BR93L66FVT-WE2	RohmSemicond	26+	8-TSSOP-B	11092	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市力拓辉电子有限公司	BR93L66FJ-WE2	ROHM	21+	SOP-J8	50	只做原装鄙视假货15118075546	询价
深圳市安罗世纪电子有限公司	BR93L66FJ-WE2	Rohm Semiconductor	2023+	8-SOIC	2500	安罗世纪电子只做原装正品货	询价
深圳市天地昆电子有限公司	BR93L66FJ-WE2	ROHM	1435+	SOP-8	1800	上传都是百分之百进口原装现货	询价

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找IC，尽在114IC

BR93L66价格

BR93L66产品属性

BR93L66供应商更多...

BR93L66芯片相关品牌

BR93L66规格书下载地址

BR93L66参数引脚图相关

BR93L66数据表相关新闻

BROADCOM 原装正品 SI00-0A10-00 集成电路IC

BR24G04NUX-3TTR

BR24G04NUX-3TTR

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DdatasheetPDF页码索引