BR93L66价格

参考价格:¥2.4014

型号:BR93L66FJ-WE2 品牌:Rohm 备注:这里有BR93L66多少钱,2025年最近7天走势,今日出价,今日竞价,BR93L66批发/采购报价,BR93L66行情走势销售排行榜,BR93L66报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BR93L66

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.53671 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

封装/外壳:8-LSSOP(0.173",4.40mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC EEPROM 4KBIT SPI 2MHZ 8SSOPB 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:8-SOIC(0.173",4.40mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC EEPROM 4KBIT SPI 2MHZ 8SOP 集成电路(IC) 存储器

ETC

知名厂家

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.53671 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.53671 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.53671 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.53671 Mbytes Page:41 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.67591 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Series EEPROMs Microwire BUS

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

BR93L66产品属性

  • 类型

    描述

  • 型号

    BR93L66

  • 功能描述

    EEPROM

更新时间:2025-8-12 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
3423
原装现货,当天可交货,原型号开票
ROHM(罗姆)
24+
TSSOP83.0mm
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ROHM
2016+
SOP8
4325
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
23+
SOP8
20000
全新原装假一赔十
ROHM/罗姆
24+
SOP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ROHM
2003
SSOP-B8
6521
现货库存/价格优惠热卖
ROHM/罗姆
25+
SOP-8
32360
ROHM/罗姆全新特价BR93L66F-WE2即刻询购立享优惠#长期有货
ROHM/罗姆
25+
SO8
54648
百分百原装现货 实单必成 欢迎询价
ROHM
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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