BR93L66RFV价格

参考价格:¥1.9283

型号:BR93L66RFVM-WTR 品牌:Rohm 备注:这里有BR93L66RFV多少钱,2025年最近7天走势,今日出价,今日竞价,BR93L66RFV批发/采购报价,BR93L66RFV行情走势销售排行榜,BR93L66RFV报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

Microwire BUS 4kbit(256x16bit) EEPROM

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

封装/外壳:8-VSSOP,8-MSOP(0.110",2.80mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC EEPROM 4KBIT SPI 2MHZ 8MSOP 集成电路(IC) 存储器

ROHM

罗姆

Microwire BUS 4kbit(256x16bit) EEPROM

ROHM

罗姆

封装/外壳:8-TSSOP(0.173",4.40mm 宽) 包装:托盘 描述:IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB 集成电路(IC) 存储器

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS 4kbit(256x16bit) EEPROM

ROHM

罗姆

High Reliability Serial EEPROMs High Reliability Series

文件:1.97777 Mbytes Page:41 Pages

ROHM

罗姆

Microwire BUS EEPROM

文件:1.24202 Mbytes Page:39 Pages

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

Microwire BUS 4Kbit(256 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

ROHM

罗姆

BR93L66RFV产品属性

  • 类型

    描述

  • 型号

    BR93L66RFV

  • 功能描述

    EEPROM

更新时间:2025-11-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
3423
原装现货,当天可交货,原型号开票
ROHM/罗姆
25+
SO8
54648
百分百原装现货 实单必成 欢迎询价
ROHM
1837+
SOP8
2953
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ROHM
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ROHM/罗姆
23+
MSOP8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ROHM/罗姆
12+
SO8
1852
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ROHM/罗姆
25+
SOP-8
32360
ROHM/罗姆全新特价BR93L66F-WE2即刻询购立享优惠#长期有货
ROHM/罗姆
25+
SOP8
880000
明嘉莱只做原装正品现货
MSSOP-8
23+
NA
15659
振宏微专业只做正品,假一罚百!

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