128 X 16 bIT Electrically Erasable Programmable ROM

128 X 16 bIT Electrically Erasable Programmable ROM

Microwire BUS 2Kbit(128 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 2Kbit(128 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 2Kbit(128 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 2Kbit(128 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing