SILICON BRIDGE RECTIFIERS

FEATURES ● Plastic case with heatsink for heat dissipation ● Surge overload -240~400 Amperes peak ● The plastic package has UL flammability classification 94V-0

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Surge overload ratings - 400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * Low forward voltage drop *

桥式整流器

BR-L/IF:35A/ Vol:200V/ VF@IF:17.5A=>1V/ Tj:-55~150℃/

SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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