256짰 bit Electrically Erasable PROM

TheBR34L02FV-W is a2kbit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is a memoryIC that reads ID in order for the Plug & Play feature to operate. Fe

DDR1/DDR2 For memory module) SPD Memory

文件：464.85 Kbytes Page：18 Pages

DDR1 SPD EEPROM

2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module

●DESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM (based on Serial Presence Detect) for DRAM Memory Module ●FEATURES 256×8 bit architecture serial EEPROM Wide operating voltage range (1.7V～5.5V) Two wire serial interface High reliability connection o

DDR1/DDR2 For memory module) SPD Memory

文件：464.85 Kbytes Page：18 Pages

封装/外壳：8-LSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC EEPROM 2KBIT I2C 8SSOPB 集成电路（IC） 存储器

DDR1/DDR2 For memory module) SPD Memory

文件：464.85 Kbytes Page：18 Pages

2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module

●DESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM (based on Serial Presence Detect) for DRAM Memory Module ●FEATURES 256×8 bit architecture serial EEPROM Wide operating voltage range (1.7V～5.5V) Two wire serial interface High reliability connection o