DDR/DDR2 (For memory module) SPD Memory

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V ・Two-wire serial interface ・High reliability connection using Au pads and Au wires ・Se

Double-cell Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory

Based on Serial Presence Detect 2Kbit(256X8bit) Serial EEPROM

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V ・Two-wire serial interface ・High reliability connection using Au pads and Au wires ・Se

DDR/DDR2 (For memory module) SPD Memory

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V ・Two-wire serial interface ・High reliability connection using Au pads and Au wires ・Se

DDR/DDR2 (For memory module) SPD Memory

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ・256×8 bit architecture serial EEPROM ・Wide operating voltage range: 1.7V-3.6V ・Two-wire serial interface ・High reliability connection using Au pads and Au wires ・Se

DDR/DDR2 (For memory module) SPD Memory

文件：484.13 Kbytes Page：19 Pages

DDR/DDR2 (For memory module) SPD Memory

文件：484.13 Kbytes Page：19 Pages