SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES • Plastic case with heatsink for Maximum Heat Dissipation • Surge overload ratings-300 Amperes • Low forward voltage drop

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Surge overload ratings-400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Low forward voltage drop

SINGLE-PHASE BRIDGE RECTIFIER

VOL TAGERANGE 50 to1000 Volts CURRENT 25 Amperes FEATURES Low cost High forward surge current capability Integrally molded heatsink provide very low thermal resistance High isolation voltage from case to lugs High temperature soldering guaranteed: 260°C/10 secon

SILICON BRIDGE RECTIFIERS

FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for printed circuit boards ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 260 °C/10 seconds,at 5 lbs. (2.3kg) tension

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES • Low cost • This series is UL recognized under component index, file number E127707 • High forward surge current capability • Integrally molded heatsink provide very low thermal resistance. • High isolation voltage from case to lugs. • High temperature soldering guaranteed: 260°C /

25 AMPERE SINGLE-PHASE SILICON BRIDGE RECTIFIER

[Invac] VOLTAGE RANGE 50 to 1000 Volts PRV CURRENT 25 Amperes FEATURES ● High efficiency ● Surge overload rating - 300 amperes peak ● Body clad with metal (electrically isolated) or plastic ● Plastic encapsulation has Underwriters ● Laboratory flammability classification 94V-0 ● Universal

Rectifiers

SINGLE-PHASE SILICON BRIDGE RECTIFIER

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SILICON BRIDGE RECTIFIERS

FEATURES ● Plastic case with heatsink for heat dissipation ● Surge overload -240~400 Amperes peak ● The plastic package has UL flammability classification 94V-0

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability * Designed for savi

桥式整流器

BR-L/IF:25A/ Vol:600V/ VF@IF:12.5A=>1V/ Tj:-55~150℃/

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Surge overload ratings-400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Low forward voltage drop

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES • Low cost • This series is UL recognized under component index, file number E127707 • High forward surge current capability • Integrally molded heatsink provide very low thermal resistance. • High isolation voltage from case to leads. • High temperature soldering guaranteed: 260/10

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES ● Low cost ● This series is UL recognized under component index, file number E127707 ● High forward surge current capability ● Integrally molded heatsink provide very low thermal resistance ● High isolation voltage from case to lugs ● High temperature soldering guaranteed: 260 °C/10

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC EEPROM 64KBIT SPI 3MHZ 8SOIC 集成电路（IC） 存储器

Supply voltage 2.7V~5.5V/Operating temperature -40C~85C type

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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Rectifiers

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)