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BR154L

SILICON BRIDGE RECTIFIERS

FEATURES ● Plastic case with heatsink for heat dissipation ● Surge overload -240~400 Amperes peak ● The plastic package has UL flammability classification 94V-0

GOOD-ARK

固锝电子

BR154L

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability * Designed for saving mounting space

DCCOM

道全

BR154L

桥式整流器

BR-L/IF:15A/ Vol:400V/ VF@IF:7.5A=>1V/ Tj:-55~150℃/

HY

虹扬科技

BR154L

SILICON BRIDGE RECTIFIERS

文件:37.16 Kbytes Page:2 Pages

HY

虹扬科技

BR154L

Silicon Bridge Rectifiers

文件:399.31 Kbytes Page:3 Pages

HY

虹扬科技

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

PANJIT

強茂

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

MOTOROLA

摩托罗拉

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

NTE

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

NEC

瑞萨

BR154L产品属性

  • 类型

    描述

  • VRRM(V):

    400

  • IO(A):

    15

  • IFSM(A):

    300

  • VF(V):

    1.10

  • IR(uA):

    10

更新时间:2026-5-20 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEP
23+
BR-L
60000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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