bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

NexFET Power Stage

文件：376.22 Kbytes Page：20 Pages

NexFET Power Stage

文件：376.22 Kbytes Page：20 Pages

封装/外壳：8-PowerVFDFN 包装：托盘 描述：IC NEXFET SYNC BUCK 8VSON 集成电路（IC） 全半桥驱动器

bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

NexFET Power Stage

文件：376.22 Kbytes Page：20 Pages

bq500101 NexFET™ Power Stage

1 Features 1• 98% System Efficiency at 5 A • Max Rated Continuous Current 10 A, Peak 15 A • High-Frequency Operation (up to 600 kHz) • High-Density SON 3.5 × 4.5 mm Footprint • Ultra-Low Inductance Package • System Optimized PCB Footprint • 3.3-V and 5-V PWM Signal Compatible • Input V

High Density EERAM Evaluation Kit

Product Features 1 Mbit SPI and 64 Kbit I²C serial EERAM devices Follows the published recommended capacitor selection for the EERAM device Test points with probe loops for I²C signals, SPI signals, VCC and GND On-board pull-ups for I²C bus operation Jumper options for 3.3V and 5V operation