1A SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

文件：1.14612 Mbytes Page：33 Pages

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC BATT CHG LI-ION 1CELL 10VSON 集成电路（IC） 电池充电器

1A SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

文件：1.14612 Mbytes Page：33 Pages

1A SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

文件：1.14612 Mbytes Page：33 Pages

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BATT CHG LI-ION 1CELL 10VSON 集成电路（IC） 电池充电器

1A SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

文件：1.14612 Mbytes Page：33 Pages

1A SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC WITH THERMAL REGULATION

文件：1.14612 Mbytes Page：33 Pages

60 W, SiC RF Power MESFET

60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power Metal Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and hig

60 W SiC RF Power MESFET Die

60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher ther