P 沟道，功率 MOSFET，-60V，-78A，6.5mΩ

BMS3003 is P-Channel Power MOSFET, -60V, -78A, 6.5mΩ, TO-220F-3SG for General-Purpose Switching Device Applications. • ON-resistance RDS(on)1 = 5.0mΩ (typ)\n• Input capacitance Ciss = 13200pF (typ)\n• -4V drive;

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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P-Channel Power MOSFET

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General-Purpose Switching Device Applications

文件：385.87 Kbytes Page：7 Pages

P-Channel Power MOSFET

文件：83.79 Kbytes Page：5 Pages

30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ■ UL