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BLW96晶体管资料

  • BLW96别名:BLW96三极管、BLW96晶体管、BLW96晶体三极管

  • BLW96生产厂家

  • BLW96制作材料:Si-NPN

  • BLW96性质:调幅 (AM)_调频 (FM)_功率放大 (L)

  • BLW96封装形式:贴片封装

  • BLW96极限工作电压:110V

  • BLW96最大电流允许值:12A

  • BLW96最大工作频率:108MHZ

  • BLW96引脚数:4

  • BLW96最大耗散功率:200W

  • BLW96放大倍数

  • BLW96图片代号:G-266

  • BLW96vtest:110

  • BLW96htest:108000000000

  • BLW96atest:12

  • BLW96wtest:200

  • BLW96代换 BLW96用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
BLW96

HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistanc

PHILIPS

飞利浦

BLW96

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. FEATURES: • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W(PEP) • Omnigold™ Metalization System

ASI

BLW96

HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLW96

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the HF and VHF band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stab

ELEFLOW

BLW96

Trans GP BJT NPN 55V 12A 4-Pin CRFM Bulk

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BPS9G2933X-450/SOT502/TRAY

AMPLEON

安谱隆

封装/外壳:SOT-121B 包装:卷带(TR) 描述:RF TRANS NPN 55V 235MHZ CRFM4 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

BLW96产品属性

  • 类型

    描述

  • Output Power:

    200W

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -65°C

  • Minimum DC Current Gain:

    15@7A@5V

  • Maximum Transition Frequency:

    245(Typ)MHz

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    4V

  • Maximum DC Collector Current:

    12A

  • Maximum Collector Emitter Voltage:

    55V

  • Maximum Collector Emitter Saturation Voltage:

    1.9(Typ)@4A@20AV

  • Material:

    Si

  • Configuration:

    Single Dual Emitter

更新时间:2026-5-14 14:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
23+
2528
原厂原装正品
PHI
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
恩XP
24+
SOT121
7600
只做原装正品现货 欢迎来电查询15919825718
PHI
25+
NA
8000
只有原装
PHI
25+
TO-59
9630
我们只做原装正品现货!量大价优!
PHI
96+
假一赔十
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
23+
TO-59
655
专营高频管模块,全新原装!
PHI
2023+
假一赔十
8800
正品渠道现货 终端可提供BOM表配单。
PHI
24+
39
PHI
26+
NA
12000
原装,正品

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