HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistanc

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. FEATURES: • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W(PEP) • Omnigold™ Metalization System

HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the HF and VHF band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stab

Trans GP BJT NPN 55V 12A 4-Pin CRFM Bulk

BPS9G2933X-450/SOT502/TRAY

封装/外壳：SOT-121B 包装：卷带（TR） 描述：RF TRANS NPN 55V 235MHZ CRFM4 分立半导体产品 晶体管 - 双极（BJT）- 射频