N-channel Enhancement Mode Power MOSFET

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isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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丝印代码：8N60；8A 600V N-channel Enhancement Mode Power MOSFET

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