BLV11晶体管资料

  • BLV11别名:BLV11三极管、BLV11晶体管、BLV11晶体三极管

  • BLV11生产厂家

  • BLV11制作材料:Si-NPN

  • BLV11性质:甚高频 (VHF)_功率放大 (L)

  • BLV11封装形式:贴片封装

  • BLV11极限工作电压:36V

  • BLV11最大电流允许值:3A

  • BLV11最大工作频率:175MHZ

  • BLV11引脚数:4

  • BLV11最大耗散功率:15W

  • BLV11放大倍数

  • BLV11图片代号:G-266

  • BLV11vtest:36

  • BLV11htest:175000000

  • BLV11atest:3

  • BLV11wtest:15

  • BLV11代换 BLV11用什么型号代替:MRF221,MRF222,MRF223,

型号 功能描述 生产厂家 企业 LOGO 操作
BLV11

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply

Philips

飞利浦

BLV11

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV11is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz FEATURES INCLUDE: • PG= 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold™ Metalization System

ASI

BLV11

VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, HF and VHF transmitters with a nominal supply voltage of 13.5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-v

ELEFLOW

BLV11

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: BLV11 is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG = 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold™ Metalization System

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV11

NPN SILICON RF POWER TRANSISTOR

ETC

知名厂家

BLV11

VHF power transistor

ETC

知名厂家

BLV11

VHF power transistor

ETC

知名厂家

BLV11产品属性

  • 类型

    描述

  • 型号

    BLV11

  • 功能描述

    射频双极电源晶体管 RF Transistor

  • RoHS

  • 制造商

    M/A-COM Technology Solutions

  • 配置

    Single 直流集电极/Base Gain hfe

  • Min

    40

  • 最大工作频率

    30 MHz 集电极—发射极最大电压

  • VCEO

    25 V 发射极 - 基极电压

  • VEBO

    4 V

  • 集电极连续电流

    20 A

  • 功率耗散

    250 W

  • 封装/箱体

    Case 211-11

  • 封装

    Tray

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
3252
原装现货,当天可交货,原型号开票
PHI
24+
224
现货供应
PHI
24+
TO-59
9630
我们只做原装正品现货!量大价优!
PH
24+
NA
6000
只做原装正品现货 欢迎来电查询15919825718
PHILIPPINES
22+
TO-59
20000
公司只有原装 品质保证
PHI
23+
TO-59
750
专营高频管模块,全新原装!
PHI
25+
TO-59
1200
全新原装现货,价格优势
PHI
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
MOTOROLA/摩托罗拉
25+
TO-59
880000
明嘉莱只做原装正品现货
MOTOROLA/摩托罗拉
24+
TO-59
30000
房间原装现货特价热卖,有单详谈

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