Power LDMOS transistor

General description A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggednes

Power LDMOS transistor

Power LDMOS transistor

General description A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggednes

Power LDMOS transistor

封装/外壳：4-BESOP（0.173"，4.40mm 宽） 包装：托盘 描述：RF MOSFET LDMOS 50V 4-HSOP 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1223-2 包装：托盘 描述：RF MOSFET LDMOS 50V 4-HSOPF 分立半导体产品 晶体管 - FET，MOSFET - 射频

4-BIt ECL/TTL Load Reducing DRAM Driver

The MC10H/100H660 is a 4–bit ECL input, translating DRAM address driver, ideally suited for driving TTL compatible DRAM inputs from an ECL system. It is designed for use in high capacity, highly interleaved DRAM memory boards, that directly interface to a high speed, pipelined ECL bus interface, w