Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1. Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance. Effective in LTE range up to 2.6GHz from 700MHz. 2. Low DC Resistance. Large Rated Current. 3. The small size of BLM03E series (0.6x0.3mm) is suitable for noise supp

封装/外壳：0201（0603 公制） 包装：卷带（TR） 描述：FERRITE BEAD 25 OHM 0201 1LN 滤波器 铁氧体磁珠和芯片

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1. Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance. Effective in LTE range up to 2.6GHz from 700MHz. 2. Low DC Resistance. Large Rated Current. 3. The small size of BLM03E series (0.6x0.3mm) is suitable for noise supp

Operating Temperature Range

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Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1. Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance. Effective in LTE range up to 2.6GHz from 700MHz. 2. Low DC Resistance. Large Rated Current. 3. The small size of BLM03E series (0.6x0.3mm) is suitable for noise supp

Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance.

1. Horizontal winding inner coil structure enables low storage capacitance which result to high noise suppression performance. Effective in LTE range up to 2.6GHz from 700MHz. 2. Low DC Resistance. Large Rated Current. 3. The small size of BLM03E series (0.6x0.3mm) is suitable for noise supp