NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

NPN SILICON PLANAR MEDUIM POWER TRANSISTOR

NPN General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37.

Amplifier Transistors

Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features • Pb−Free Packages are Available*

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-92; SOT54 plastic package. PNP complement: BC369. FEATURES • High current (1 A) • Low voltage (20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

BC368 (BPL) TO-92 BCE Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF Applications, Suitable for Class-B Audio Output Stages up to 3W

Amplifier Transistors

Amplifier Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Low Voltage APPLICATIONS ● General Purpose Switching and Amplification

COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR

BC 368 (NPN) and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency applications.

NPN Silicon Epitaxial Planar Transistor

Applications • General purpose switching and amplification • Power applications such as audio output stages

NPN Silicon AF Transistor (High current gain High collector current)

NPN Silicon AF Transistor ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 369 (PNP)

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High current. Applications Linear voltage regulators, supply line switch for negative voltages, audio (pre-)amplifier applications.

NPN medium power transistor; 20 V, 1 A

NPN medium power transistor 20 V, 1 A

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

NPN Silicon AF Transistor (High current gain High collector current)

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 20V 1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Voltage and Current are Negative

文件：56.62 Kbytes Page：4 Pages

Amplifier Transistors

Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features • Pb−Free Packages are Available*

Amplifier Transistors

Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features • Pb−Free Packages are Available*

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 20V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Voltage and Current are Negative

文件：56.62 Kbytes Page：4 Pages

Voltage and Current are Negative

文件：56.62 Kbytes Page：4 Pages

Voltage and Current are Negative

文件：56.62 Kbytes Page：4 Pages

Voltage and Current are Negative

文件：56.62 Kbytes Page：4 Pages

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides th

Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB E