VHF POWER MOSFET

DESCRIPTION: The ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG= 11 dB Typical at 225 MHz • 5:1Load VSWR Capability • Omnigold™ metalization system

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

RF Manual 16th edition

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package, with two ceramic caps. The mounting flange provides

VHF power MOSFET N-Channel Enhancement Mode

VHF push-pull power MOS transistor

RF MOSFET

封装/外壳：SOT-262A1 包装：托盘 描述：RF FET 2 NC 65V 11.5DB SOT262A1 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

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VHF push-pull power MOS transistor

文件：89.65 Kbytes Page：13 Pages

1/2 (12.7 mm) Conductive Plastic and Cermet Potentiometers

FEATURES • Model 248: 0.5 W at 70 °C (conductive plastic element) • Model 249: 1 W at 70 °C (cermet element) • Cost effective panel potentiometer • PCB mounting • Tests according to CECC 41000 or IEC 60393-1 • Material categorization: for definitions of compliance please see www.vishay.com

6 x AA battery holder with 5.5mm/2.1mm plug

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1/2 (12.7 mm) Conductive Plastic & Cermet Potentiometers

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High CMV, High Performance Isolation Amplifiers

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Electrostatic Discharge Prevention-Input Protection

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