VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

VHF POWER MOSFET

DESCRIPTION: The ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG= 11 dB Typical at 225 MHz • 5:1Load VSWR Capability • Omnigold™ metalization system

RF Manual 16th edition

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package, with two ceramic caps. The mounting flange provides

VHF power MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM\nand FM Power Amplifier Applications up to 250 MHz.FEATURES INCLUDE:\n• PG= 11 dB Typical at 225 MHz\n• 5:1Load VSWR Capability\n• Omnigold™ metalization system

VHF push-pull power MOS transistor

RF MOSFET

封装/外壳：SOT-262A1 包装：托盘 描述：RF FET 2 NC 65V 11.5DB SOT262A1 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

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VHF push-pull power MOS transistor

文件：89.65 Kbytes Page：13 Pages

FOUR UA741 QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM148 consists of four independent, high gain internally compensated, low power operational amplifiers which have been designed to provide functional characteristics identical to those of the familiar UA741 operational amplifier. In addition the total supply current for all four a

FOUR UA741 QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM148 consists of four independent, high gain internally compensated, low power operational amplifiers which have been designed to provide functional characteristics identical to those of the familiar UA741 operational amplifier. In addition the total supply current for all four a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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