Avionics LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

RF Manual 16th edition

RF Manual 16th edition

Avionics LDMOS transistor

General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Features ■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: ◆ Load power ≥ 200 W

Avionics LDMOS transistors

RF Manual 16th edition

场效应管(MOSFET)

封装/外壳：SOT-502A 包装：托盘 描述：RF FET LDMOS 75V 13DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

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封装/外壳：SOT-502A 包装：卷带（TR） 描述：RF FET LDMOS 75V 13DB SOT502A 分立半导体产品 晶体管 - FET，MOSFET - 射频

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic