Avionics LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina

RF Manual 16th edition

封装/外壳：SOT-467C 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 75V 15DB SOT467C 分立半导体产品 晶体管 - FET，MOSFET - 射频

MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm ■ HIGH POWER P1dB=40.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

100W Medical Adapters for Health Care Applications with PFC CISPR-11EN55011classBemissionLimitsandaredesignedto

文件：452.44 Kbytes Page：3 Pages

100W Medical Grade Desktop Switching Power Adapters

文件：485.07 Kbytes Page：4 Pages