BATTERY HOLDERS & SNAPS AA, AAA, C, D & COIN CELL

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16-bit transparent latch 3-State

DESCRIPTION The 74ABT16373B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 16-bit transparent latch • Multiple VCC and GND pins minimize switching noise • Power-up 3-State • Live insertion/extraction permitte

16-bit transparent latch 3-State

DESCRIPTION The 74ABT16373B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • 16-bit transparent latch • Multiple VCC and GND pins minimize switching noise • Power-up 3-State • Live insertion/extraction permitte

16-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT16374B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT16374B has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each regist

16-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT16374B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT16374B has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each regist

16-bit transparent latch 3-State

16-bit D-type flip-flop; positive-edge trigger 3-State

Ultra fast low-loss rectifier

DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low lea

Silicon MOS IC

Silicon NPN Transistor Horizontal Deflection

Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V • Switching Times With Inductive Loads:

Silicon NPN Phototransistor

For optical control systems Features • High sensitivity • Fast response : tr = 4 µs (typ.) • Adoption of visible light cutoff resin • Ultraminiature, thin side-view type package

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE