BGU价格

参考价格:¥1.4470

型号:BGU6101,147-CUTTAPE 品牌:NXP 备注:这里有BGU多少钱,2024年最近7天走势,今日出价,今日竞价,BGU批发/采购报价,BGU行情走势销售排行榜,BGU报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS

Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor.

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Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS

Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor.

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Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS

Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor.

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

Generaldescription TheBGU8004isaLowNoiseAmplifier(LNA)forGNSSreceiverapplications.ItcomesasextremelysmallandthinWaferLevelChipScalePackage(WLCSP).TheBGU8004requiresoneexternalmatchinginductor. TheBGU8004adaptsitselftothechangingenvironmentresultingfromco

nxpNXP Semiconductors

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nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

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RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

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low-noise high-linearity amplifier

Generaldescription TheBGU8062is,alsoknownastheBTS3001M,ahighlinearitybypassamplifierforwirelessinfrastructureapplications.TheBGU8062isequippedwithfastshutdowntosupportTDDsystems.TheLNAhasahighinputandoutputreturnlossandisdesignedtooperatebetween1.5GHz

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SiGe MMIC amplifier

文件:62.38 Kbytes Page:8 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

文件:118.02 Kbytes Page:10 Pages

nxpNXP Semiconductors

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nxp

Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

文件:118.02 Kbytes Page:10 Pages

nxpNXP Semiconductors

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nxp

Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass

文件:118.02 Kbytes Page:10 Pages

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封装/外壳:6-XFDFN 包装:托盘 描述:IC AMP GALIL 1.559-1.61GHZ 6XSON RF/IF,射频/中频和 RFID 射频放大器

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封装/外壳:6-XFDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF AMP GP 40MHZ-4GHZ 6HXSON RF/IF,射频/中频和 RFID 射频放大器

nxpNXP Semiconductors

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Wideband silicon germanium low-noise amplifier MMIC

文件:158.4 Kbytes Page:17 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

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The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:1.71227 Mbytes Page:20 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS

文件:136.59 Kbytes Page:18 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SiGe:C Low Noise Amplifier MMIC for GPS

文件:221.58 Kbytes Page:19 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:277.8 Kbytes Page:20 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS

文件:221.58 Kbytes Page:19 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:277.8 Kbytes Page:20 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:1.70023 Mbytes Page:19 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:1.80514 Mbytes Page:19 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:1.80514 Mbytes Page:19 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo

文件:1.90835 Mbytes Page:19 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

1 GHz wideband low-noise amplifier

文件:163.22 Kbytes Page:10 Pages

PhilipsROYAL PHILIPS

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Analog high linearity low noise variable gain amplifier

文件:346.64 Kbytes Page:16 Pages

nxpNXP Semiconductors

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Analog controlled high linearity low noise variable gain amplifier

文件:393.6 Kbytes Page:22 Pages

nxpNXP Semiconductors

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Analog controlled high linearity low noise variable gain amplifier

文件:378.42 Kbytes Page:20 Pages

nxpNXP Semiconductors

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Analog high linearity low noise variable gain amplifier

文件:439.37 Kbytes Page:16 Pages

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Integrated concurrent 5 GHz notch filter

文件:348.18 Kbytes Page:20 Pages

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Fully integrated, high performance LNA with built-in bypass

文件:419.84 Kbytes Page:21 Pages

nxpNXP Semiconductors

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The best reception of GNSS signals with the smallest footprint

文件:331.73 Kbytes Page:2 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BGU产品属性

  • 类型

    描述

  • 型号

    BGU

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    SiGe MMIC amplifier

更新时间:2024-6-3 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP
23+
SOT
10065
原装正品,有挂有货,假一赔十
NXP/恩智浦
21+
QFN
10000
全新原装 公司现货 价格优
NXP USA Inc.
21+
6-XFDFN
12000
RF/IF/RFID全系配套产品,原装正品现货!
PANJIT/强茂
21+ROHS
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
NXP(恩智浦)
23+
NA/
8735
原厂直销,现货供应,账期支持!
NXP/恩智浦
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
NXP
2023+
SMD
700000
柒号芯城跟原厂的距离只有0.07公分
NXP/恩智浦
22+
QFN
3255
强势库存!原装现货!
LIT
NA
8553
一级代理 原装正品假一罚十价格优势长期供货
NXP/恩智浦
23+
QFN
90000
只做原厂渠道价格优势可提供技术支持

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