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BGU价格
参考价格:¥1.4470
型号:BGU6101,147-CUTTAPE 品牌:NXP 备注:这里有BGU多少钱,2024年最近7天走势,今日出价,今日竞价,BGU批发/采购报价,BGU行情走势销售排行榜,BGU报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS Generaldescription TheBGU6009/N2is,alsoknownastheGPS1002M,aLow-NoiseAmplifier(LNA)for GNSSreceiverapplicationsinaplasticleadless6-pin,verythinsmalloutlineSOT1230 package.TheBGU6009/N2requiresonlyoneexternalmatchinginductorandone externaldecouplingcapacitor. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Generaldescription TheBGU8004isaLowNoiseAmplifier(LNA)forGNSSreceiverapplications.ItcomesasextremelysmallandthinWaferLevelChipScalePackage(WLCSP).TheBGU8004requiresoneexternalmatchinginductor. TheBGU8004adaptsitselftothechangingenvironmentresultingfromco | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
low-noise high-linearity amplifier Generaldescription TheBGU8062is,alsoknownastheBTS3001M,ahighlinearitybypassamplifierforwirelessinfrastructureapplications.TheBGU8062isequippedwithfastshutdowntosupportTDDsystems.TheLNAhasahighinputandoutputreturnlossandisdesignedtooperatebetween1.5GHz | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SiGe MMIC amplifier 文件:62.38 Kbytes Page:8 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass 文件:118.02 Kbytes Page:10 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass 文件:118.02 Kbytes Page:10 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass 文件:118.02 Kbytes Page:10 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
封装/外壳:6-XFDFN 包装:托盘 描述:IC AMP GALIL 1.559-1.61GHZ 6XSON RF/IF,射频/中频和 RFID 射频放大器 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
封装/外壳:6-XFDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF AMP GP 40MHZ-4GHZ 6HXSON RF/IF,射频/中频和 RFID 射频放大器 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Wideband silicon germanium low-noise amplifier MMIC 文件:158.4 Kbytes Page:17 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:1.71227 Mbytes Page:20 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS 文件:136.59 Kbytes Page:18 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SiGe:C Low Noise Amplifier MMIC for GPS 文件:221.58 Kbytes Page:19 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:277.8 Kbytes Page:20 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS 文件:221.58 Kbytes Page:19 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:277.8 Kbytes Page:20 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:1.70023 Mbytes Page:19 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:1.80514 Mbytes Page:19 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:1.80514 Mbytes Page:19 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo 文件:1.90835 Mbytes Page:19 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
1 GHz wideband low-noise amplifier 文件:163.22 Kbytes Page:10 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Analog high linearity low noise variable gain amplifier 文件:346.64 Kbytes Page:16 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Analog controlled high linearity low noise variable gain amplifier 文件:393.6 Kbytes Page:22 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Analog controlled high linearity low noise variable gain amplifier 文件:378.42 Kbytes Page:20 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Analog high linearity low noise variable gain amplifier 文件:439.37 Kbytes Page:16 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Integrated concurrent 5 GHz notch filter 文件:348.18 Kbytes Page:20 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Fully integrated, high performance LNA with built-in bypass 文件:419.84 Kbytes Page:21 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
The best reception of GNSS signals with the smallest footprint 文件:331.73 Kbytes Page:2 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |
BGU产品属性
- 类型
描述
- 型号
BGU
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
SiGe MMIC amplifier
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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NXP |
23+ |
SOT |
10065 |
原装正品,有挂有货,假一赔十 |
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NXP/恩智浦 |
21+ |
QFN |
10000 |
全新原装 公司现货 价格优 |
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NXP USA Inc. |
21+ |
6-XFDFN |
12000 |
RF/IF/RFID全系配套产品,原装正品现货! |
|||
PANJIT/强茂 |
21+ROHS |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NXP(恩智浦) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
NXP/恩智浦 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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NXP |
2023+ |
SMD |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
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NXP/恩智浦 |
22+ |
QFN |
3255 |
强势库存!原装现货! |
|||
LIT |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NXP/恩智浦 |
23+ |
QFN |
90000 |
只做原厂渠道价格优势可提供技术支持 |
BGU规格书下载地址
BGU参数引脚图相关
- c903
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- BGU7053
- BGU7052
- BGU7051,118
- BGU7051
- BGU7045,115
- BGU7045
- BGU7044.115
- BGU7044,115-CUTTAPE
- BGU7044,115
- BGU7044
- BGU7042,115
- BGU7042
- BGU7041,115
- BGU7041
- BGU7033,115
- BGU7033
- BGU7032,115
- BGU7032
- BGU7031,115
- BGU7031
- BGU7008,115
- BGU7008
- BGU7007.115
- BGU7007,115-CUTTAPE
- BGU7007,115
- BGU7007
- BGU7005,115
- BGU7005
- BGU7004,115
- BGU7004
- BGU7003,132
- BGU7003
- BGU6104,147
- BGU6104
- BGU6102,147
- BGU6102
- BGU6101,147-CUTTAPE
- BGU6101
- BGU6005
- BGU2003
- BG-TR
- BGT70E6327XTSA1
- BGT60E6327XTSA1
- BGT60
- BGT3842
- BGT384180
- BGT24RFB2412EVALKITTOBO1
- BGT24MTR12E6327XUMA1
- BGT24MTR12BOARDTOBO1
- BGT24MTR11E6327XUMA1
- BGT24MTR11BOARDTOBO1
- BGT24MR2E6327XUMA1
- BGT24MR2BOARDTOBO1
- BGSF18DM20E6327
- BGS8M2
- BGS8L5
- BGS8L2
- BGS8H2
- BGS8358
- BGS8324
- BGS67A
- BGS67
- BGS6_18
- BGS6_16
- BGS5_18
- BGS5_16
- BGS4_18
- BGS4_16
- BGS3_18
- BGS22WL10E6327XTSA1
- BGS22W2L10E6327XTSA1
- BGS2_18
- BGS2_16
- BGS15AN16E6327
- BGS14AN16E6327XTSA1
- BGS12SN6E6327
- BGS12AL7-6E6327
- BGS12AL7-4E6327
- BGS12A
- BGS-1
BGU数据表相关新闻
BGT24MTR11E6327射频和无线 RF
BGS18MA12E6327XTSA1BGSX22G5A10E6327XTSA1BGT24LTR11N16E6327XTSA1BGT24MTR11E6327
2023-6-30BGU8H1X
优势渠道
2023-3-24BGT24MTR11E6327XUMA1
优势渠道
2023-3-2BGU8009,115
属性参数值 商品目录RF放大器 频率范围1.559GHz~1.61GHz 电源电流4.4mA RF类型Galileo,GLONASS,GPS,LTE 工作电压1.5V~3.1V IP1dB-7dBm 增益18dB 测试频率1.559GHz~1.61GHz 噪声系数0.65dB
2020-8-28BGT24MTR12E6327XUMA1 英飞凌 射频收发器
BGT24MTR12E6327XUMA1英飞凌射频收发器
2020-7-14BGU8009公司原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-1-14
DdatasheetPDF页码索引
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