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BGS价格
参考价格:¥0.0000
型号:BGS-1 品牌:Sr 备注:这里有BGS多少钱,2024年最近7天走势,今日出价,今日竞价,BGS批发/采购报价,BGS行情走势销售排行榜,BGS报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
WLAN LNA Switch Generaldescription TheBGS8424is,alsoknownastheWLAN3101H,afullyintegratedMMIClow-noise amplifier,andSP3TswitchforBluetoothpathandtransmitpath.ForWLANapplications inthe2.4GHzto2.5GHzISMband.ManufacturedusingthehighperformanceQUBiC eighthgenerationSiGe:Ct | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
WLAN LNA Switch Generaldescription TheBGS8424is,alsoknownastheWLAN3101H,afullyintegratedMMIClow-noise amplifier,andSP3TswitchforBluetoothpathandtransmitpath.ForWLANapplications inthe2.4GHzto2.5GHzISMband.ManufacturedusingthehighperformanceQUBiC eighthgenerationSiGe:Ct | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
WLAN LNA Switch Generaldescription TheBGS8458,alsoknownastheWLAN3101C,isafullyintegratedMMICLow-Noise AmplifierandSP2Tswitchfortransmitpath.ForWLANapplicationsinthe4.9GHzto 5.925GHzISMband.ManufacturedusinghighperformanceQUBiCeighthgeneration SiGe:CtechnologyofNXP. The | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
WLAN LNA Switch Generaldescription TheBGS8458,alsoknownastheWLAN3101C,isafullyintegratedMMICLow-Noise AmplifierandSP2Tswitchfortransmitpath.ForWLANapplicationsinthe4.9GHzto 5.925GHzISMband.ManufacturedusinghighperformanceQUBiCeighthgeneration SiGe:CtechnologyofNXP. The | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
BGSA144ML10 Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning SP4T Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
BGSA144ML10 Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning SP4T Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning SP4T Features LowRONresistanceof1.74ΩateachRFportinONstate UltralowCOFFcapacitanceof89fFinOFFstate IndividuallycontrolledreflectiveopenorshorttogroundOFFports toeliminateuwantedantennaresonances HighRFoperatingvoltagehandling80VinOFFstate MIPI | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T with resonance stoppers Features UltralowRONresistanceof0.8ΩinONstate LowCOFFcapacitanceof155fFinOFFstate RFoperatingvoltagehandling45VinOFFstate MIPIRFFE2.1controlinterface Supportboth1.8Vand1.2VVIOoperation ExternalUSID_SELpinenabling4defaultUSIDaddresses S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T with resonance stoppers Features UltralowRONresistanceof0.8ΩinONstate LowCOFFcapacitanceof155fFinOFFstate RFoperatingvoltagehandling45VinOFFstate MIPIRFFE2.1controlinterface Supportboth1.8Vand1.2VVIOoperation ExternalUSID_SELpinenabling4defaultUSIDaddresses S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T with resonance stoppers Features LowRONresistanceof1.5ΩinONstate LowCOFFcapacitanceof80fFinOFFstate RFoperatingvoltagehandling50VinOFFstate MIPIRFFE2.1controlinterface Supportboth1.8Vand1.2VVIOoperation ExternalUSID_SELpinenabling4defaultUSIDaddresses Smallfo | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T with resonance stoppers Features LowRONresistanceof1.5ΩinONstate LowCOFFcapacitanceof80fFinOFFstate RFoperatingvoltagehandling50VinOFFstate MIPIRFFE2.1controlinterface Supportboth1.8Vand1.2VVIOoperation ExternalUSID_SELpinenabling4defaultUSIDaddresses Smallfo | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T Features UltralowRONresistanceof0.85ΩinONstate LowCOFFcapacitanceof160fFinOFFstate HighRFoperatingpeakvoltagehandlingof45VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4defaultUSIDaddressesviaexternalUSID_S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T Features UltralowRONresistanceof0.85ΩinONstate LowCOFFcapacitanceof160fFinOFFstate HighRFoperatingpeakvoltagehandlingof45VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4defaultUSIDaddressesviaexternalUSID_S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T Features UltralowRONresistanceof0.85ΩinONstate LowCOFFcapacitanceof160fFinOFFstate HighRFoperatingpeakvoltagehandlingof45VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4defaultUSIDaddressesviaexternalUSID_S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T Features UltralowRONresistanceof0.85ΩinONstate LowCOFFcapacitanceof160fFinOFFstate HighRFoperatingpeakvoltagehandlingof45VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4defaultUSIDaddressesviaexternalUSID_S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra small antenna tuning SP4T Features UltralowRONresistanceof0.85ΩinONstate LowCOFFcapacitanceof160fFinOFFstate HighRFoperatingpeakvoltagehandlingof45VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4defaultUSIDaddressesviaexternalUSID_S | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Two throws low resistance antenna tuning switch Features •LowRONresistanceof1.4ΩateachportinONstate •LowCOFFcapacitanceof157fFateachportinOFFstate •HighRFoperatingpeakvoltagehandlingof50VinOFFstate •Lowharmonicgeneration •MIPIRFFE2.1controlinterface •SupportofMIPIandGPIOcontrolmodes •1. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning switch Features LowRONresistanceof2.0ΩateachportinONstate LowCOFFcapacitanceof165fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical90VinOFFstate Lowharmonicgeneration MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning switch Description TheBGSA400ML10isaversatileshunttoground4xsingle-polesingle-throw(4xSPST)RFantennatuning switch.ItisoptimizedforlowCOFFaswellaslowRONenablingapplicationsupto7.125GHz. TheBGSA400ML10isidealforantennatuningapplication.Thischipintegrateson-chip | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning switch Features LowRONresistanceof2.0ΩateachportinONstate LowCOFFcapacitanceof165fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical90VinOFFstate Lowharmonicgeneration MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning switch Description TheBGSA400ML10isaversatileshunttoground4xsingle-polesingle-throw(4xSPST)RFantennatuning switch.ItisoptimizedforlowCOFFaswellaslowRONenablingapplicationsupto7.125GHz. TheBGSA400ML10isidealforantennatuningapplication.Thischipintegrateson-chip | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Ultra high RF voltage antenna tuning switch Description TheBGSA400ML10isaversatileshunttoground4xsingle-polesingle-throw(4xSPST)RFantennatuning switch.ItisoptimizedforlowCOFFaswellaslowRONenablingapplicationsupto7.125GHz. TheBGSA400ML10isidealforantennatuningapplication.Thischipintegrateson-chip | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Four throws low resistance antenna tuning switch Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Four throws low resistance antenna tuning switch Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Four throws low resistance antenna tuning switch Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Four throws low resistance antenna tuning switch Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Four throws low resistance antenna tuning switch Features LowRONresistanceof0.98ΩateachportinONstate LowCOFFcapacitanceof205fFateachportinOFFstate HighRFoperatingpeakvoltagehandlingoftypical50VinOFFstate MIPIRFFE2.1controlinterface Extremelylowcurrentconsumptionof22μA 4USIDaddresses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
DPDT cross switch with GPIO control interface Description TheBGSX22G6U10RFCMOSswitchisspecificallydesignedforGSM,WCDMA,LTEand5Gapplications.ThisDPDToerslow insertionlossevenathighfrequenciesofupto7.125GHz,lowharmonicgenerationalongwithhighisolationbetweenRFports. Inaddition,thefastswitchingspeed | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
DPDT cross switch with GPIO control interface Description TheBGSX22G6U10RFCMOSswitchisspecificallydesignedforGSM,WCDMA,LTEand5Gapplications.ThisDPDToerslow insertionlossevenathighfrequenciesofupto7.125GHz,lowharmonicgenerationalongwithhighisolationbetweenRFports. Inaddition,thefastswitchingspeed | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
3P3T antenna cross switch with MIPI RFFE control interface Features Highlinearityupto38dBmpeakpower Fastswitchingtime(max2µs)for5GSRSapplications Lowinsertionlossandhighporttoportisolationupto7.125GHz LowpowerconsumptionallowstouseMIPIRFFEsupply MIPIRFFE2.1controlinterface Sowareandhardwareprog | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
3P3T antenna cross switch with MIPI RFFE control interface Features Highlinearityupto38dBmpeakpower Fastswitchingtime(max2µs)for5GSRSapplications Lowinsertionlossandhighporttoportisolationupto7.125GHz LowpowerconsumptionallowstouseMIPIRFFEsupply MIPIRFFE2.1controlinterface Sowareandhardwareprog | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
封装/外壳:6-XFDFN 裸露焊盘 包装:卷带(TR) 描述:IC RF SWITCH SPDT 3GHZ TSLP7-6 RF/IF,射频/中频和 RFID 射频开关 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
50-4000 MHz SILICON GERMANIUM Gain Block 文件:638.73 Kbytes Page:9 Pages | BEREXBeRex Corporation beRex Corporation | |||
50-4000 MHz SILICON GERMANIUM Gain Block 文件:795.9 Kbytes Page:8 Pages | BEREXBeRex Corporation beRex Corporation | |||
50-4000 MHz SILICON GERMANIUM Gain Block 文件:1.01455 Mbytes Page:8 Pages | BEREXBeRex Corporation beRex Corporation | |||
包装:盒 描述:GLOVE SMALL 工具 个人防护装备(PPE) | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | |||
50-4000 MHz SILICON GERMANIUM Gain Block 文件:1.01455 Mbytes Page:8 Pages | BEREXBeRex Corporation beRex Corporation | |||
50-4000 MHz SILICON GERMANIUM Gain Block 文件:638.73 Kbytes Page:9 Pages | BEREXBeRex Corporation beRex Corporation | |||
SP10T Diversity Antenna Switch with MIPI RFFE Interface 文件:1.69098 Mbytes Page:18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Material Content Data Sheet 文件:32.95 Kbytes Page:1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Material Content Data Sheet 文件:32.95 Kbytes Page:1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SPDT RF Switch 文件:298.58 Kbytes Page:8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SPDT RF Switch 文件:1.37811 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SPDT RF Switch 文件:1.44641 Mbytes Page:16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SPDT general purpose switch for high power applications 文件:884.41 Kbytes Page:13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
General purpose RF CMOS power SPDT Switch 文件:3.65772 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
BGS12PL6 general purpose high RF power SPDT switch is designed 文件:82.15 Kbytes Page:3 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SPDT high linearity, high power RF Switch 文件:2.84036 Mbytes Page:17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Wideband RF SPDT Switch in ultra small package with 0.64mm2 footprint 文件:1.83923 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
0.1 - 6.0 GHz SPDT Switch in ultra small package with 0.77mm2 footprint 文件:3.68415 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
High switching speed, ideal for WLAN and Bluetooth applications 文件:2.51091 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Wideband RF SPDT Switch in small package with 0.77mm2 footprint 文件:2.47023 Mbytes Page:16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Wideband SPDT Diversity Switch with High Switching Speed 文件:1.30461 Mbytes Page:16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Wideband SPDT Diversity Switch with High Switching Speed 文件:1.30461 Mbytes Page:16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SP3T Antenna Switch with Antenna Termination Port 文件:1.51612 Mbytes Page:16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SP3T Diversity Antenna Switch with GPIO Interface 文件:729.9 Kbytes Page:13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SP3T high linearity, high power RF Switch 文件:2.80738 Mbytes Page:15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
BGS产品属性
- 类型
描述
- 型号
BGS
- 功能描述
RF 开关 IC SPDT RF Switch
- RoHS
否
- 制造商
M/A-COM Technology Solutions
- 开关数量
Single
- 开关配置
SPDT
- 介入损耗
0.6 dB
- 截止隔离(典型值)
43 dB
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
PQFN-16
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
NA/ |
12417 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEXPERIA/安世 |
24+ |
SOT567 |
860000 |
明嘉莱只做原装正品现货 |
|||
NXP/恩智浦 |
22+ |
H12X2QFN |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|||
NXP此货绝对好价格 |
23+ |
30000 |
房间原装现货特价热卖,有单详谈 |
||||
NXP/恩智浦 |
22+ |
H12X2QFN |
8000 |
原装正品支持实单 |
|||
PHILIPS |
23+ |
模块 |
12523 |
||||
INFINEON-英飞凌 |
24+25+/26+27+ |
射频放大器 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NXP |
24+ |
H12X2QFN |
10000 |
原装正品 |
|||
NEXPERIA/安世 |
2122+ |
SOT567 |
60000 |
全新原装正品现货,假一赔十 |
|||
PHI |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
BGS规格书下载地址
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2020-12-24BGS8H2公司原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-1-14
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- P74
- P75
- P76
- P77
- P78
- P79
- P80