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BFY晶体管资料

BFY10别名：BFY10三极管、BFY10晶体管、BFY10晶体三极管
BFY10生产厂家：英国Mullard有限公司_荷兰飞利浦公司_德国凡尔伏公
BFY10制作材料：Si-NPN
BFY10性质：射频/高频放大（HF）_开关管（S）
BFY10封装形式：直插封装
BFY10极限工作电压：45V
BFY10最大电流允许值：0.05A
BFY10最大工作频率：120MHZ
BFY10引脚数：3
BFY10最大耗散功率：0.3W
BFY10放大倍数：β>25
BFY10图片代号：D-9
BFY10vtest：45
BFY10htest：120000000
BFY10atest：.05
BFY10wtest：.3

BFY10代换 BFY10用什么型号代替：BC107,BC167,BC171,BC182,BC183,BC207,BC237,BC382,BC546,BC547,BC582,3DG110C,

BFY价格

参考价格：￥22.7730

型号：BFY90 品牌：Central Semiconductor Co 备注：这里有BFY多少钱，2024年最近7天走势，今日出价，今日竞价，BFY批发/采购报价，BFY行情走势销售排行榜，BFY报价。

型号	功能描述	生产厂家&企业
BFY180	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=2.6dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY180	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.2dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY181	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.4dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY182	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY183ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY193	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY193	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY193ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY193H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY193P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY193S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY196	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=3dBat2GHz •ESAQualificationpending	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY196	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY196H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY196P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY196S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY280	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,lowpoweramplifiersatcollectorcurrentsfrom0.2mAto8mA •Hermeticallysealedmicrowavepackage •fT=7.2GHz,F=2.5dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENSSiemens Ltd 西门子德国西门子股份公司
BFY405	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForLowCurrentApplications •ForOscillatorsupto12GHz •NoiseFigureF=1.15dBat1.8GHz OutstandingGms=23dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY405ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForLowCurrentApplications •ForOscillatorsupto12GHz •NoiseFigureF=1.15dBat1.8GHz OutstandingGms=23dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY405H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForLowCurrentApplications •ForOscillatorsupto12GHz •NoiseFigureF=1.15dBat1.8GHz OutstandingGms=23dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY405P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForLowCurrentApplications •ForOscillatorsupto12GHz •NoiseFigureF=1.15dBat1.8GHz OutstandingGms=23dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY405S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForLowCurrentApplications •ForOscillatorsupto12GHz •NoiseFigureF=1.15dBat1.8GHz OutstandingGms=23dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY420	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY420ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY420H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY420P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY420S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY450	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForMediumPowerAmplifiers •CompressionPointP-1dB=19dBm1.8GHz Max.AvailableGainGma=16dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •SIEGET25-Line In	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY450ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForMediumPowerAmplifiers •CompressionPointP-1dB=19dBm1.8GHz Max.AvailableGainGma=16dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •SIEGET25-Line In	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY450H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForMediumPowerAmplifiers •CompressionPointP-1dB=19dBm1.8GHz Max.AvailableGainGma=16dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •SIEGET25-Line In	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY450P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForMediumPowerAmplifiers •CompressionPointP-1dB=19dBm1.8GHz Max.AvailableGainGma=16dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •SIEGET25-Line In	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY450S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForMediumPowerAmplifiers •CompressionPointP-1dB=19dBm1.8GHz Max.AvailableGainGma=16dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=20GHz •SIEGET25-Line In	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY50	NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaTO-39metalpackage. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.35V). APPLICATIONS •Generalpurposeindustrialapplications.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BFY50	MEDIUM POWER AMPLIFIER DESCRIPTION TheBFY50andBFY52aresiliconplanarepitaxialNPNtransistorsinJedecTO-39metalcase.Theyareintendedforgeneralpurposelinearandswitchingapplications.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
BFY50	Small Signal Transistors SmallSignalTransistorsTO-39Case(Continued)	CentralCentral Semiconductor Corp 美国中央半导体
BFY50	SILICON PLANAR TRANSISTORS SILICONPLANARTRANSISTORS GeneralPurposeTransistors.	CDIL CDIL
BFY50	SILICON NPN TRANSISTOR Description TheBFY50isaSiliconPlanarEpitaxialNPNTransistorinJedecTO39metalcase.theyareintendedforgeneralpurposelinearandswitchingapplications	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司
BFY51	NPN medium power transistors DESCRIPTION NPNmediumpowertransistorinaTO-39metalpackage. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.35V). APPLICATIONS •Generalpurposeindustrialapplications.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BFY51	MEDIUM POWER AMPLIFIER DESCRIPTION TheBFY50andBFY52aresiliconplanarepitaxialNPNtransistorsinJedecTO-39metalcase.Theyareintendedforgeneralpurposelinearandswitchingapplications.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
BFY51	Small Signal Transistors SmallSignalTransistorsTO-39Case(Continued)	CentralCentral Semiconductor Corp 美国中央半导体
BFY51	SILICON PLANAR TRANSISTORS SILICONPLANARTRANSISTORS GeneralPurposeTransistors.	CDIL CDIL

BFY产品属性

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BFY
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BFY供应商更多...

更新时间：2024-6-23 16:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	BFY19	NO	NO		12		询价
深圳市豪迈兴电子有限公司	BFY19	MOT/ST/PH	2339+	CAN3	13523	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市河锋鑫科技有限公司	BFY181ESZZZA1	INFINEON	22+	16+	8000	终端可免费供样,支持BOM配单	询价
深圳市永贝尔科技有限公司	BFY180	INFINEON	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市弘为电子有限公司	BFY19	MOT/PHI	16+	CAN3	19500	原装现货假一罚十	询价
深圳市安富世纪电子有限公司	BFY181ESZZZA1	INFINEON	23+	16+	8000	只做原装现货	询价
深圳市川蓝电子科技有限公司	BFY181(ES)	INFINEON	23+	--	14253	原包装原标现货,假一罚十,	询价

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