BFT晶体管资料

  • BFT12别名:BFT12三极管、BFT12晶体管、BFT12晶体三极管

  • BFT12生产厂家:德国西门子AG公司

  • BFT12制作材料:Si-NPN

  • BFT12性质:超高频/特高频 (UHF)_宽频带放大 (A)_振荡级 (

  • BFT12封装形式:贴片封装

  • BFT12极限工作电压:25V

  • BFT12最大电流允许值:0.15A

  • BFT12最大工作频率:2GHZ

  • BFT12引脚数:3

  • BFT12最大耗散功率

  • BFT12放大倍数

  • BFT12图片代号:G-21

  • BFT12vtest:25

  • BFT12htest:2000000000

  • BFT12atest:.15

  • BFT12wtest:0

  • BFT12代换 BFT12用什么型号代替:BFG34,BFT15,BFT16,BFW16,BFR95,2G711C,

BFT价格

参考价格:¥0.4927

型号:BFT25,215 品牌:NXP 备注:这里有BFT多少钱,2024年最近7天走势,今日出价,今日竞价,BFT批发/采购报价,BFT行情走势销售排行榜,BFT报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPN 2 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT23envelope. ItisprimarilyintendedforuseinRFlowpoweramplifiers,suchasinpocketphones,pagingsystems,etc.Thetransistorfeatureslowcurrentconsumption(100µAto1mA);duetoitshightransitionfrequency,italsohasexcellentwideba

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 5 GHz wideband transistor

Generaldescription TheBFT25AisasiliconNPNtransistor,primarilyintendedforuseinRFlowpoweramplifiers,suchaspockettelephonesandpagingsystemswithsignalfrequenciesupto2GHz. Thetransistorisencapsulatedina3-pinplasticSOT23envelope. Features ■Lowcurrentconsumpt

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Small Signal Transistors

CentralCentral Semiconductor Corp

美国中央半导体

Central

SILICON EPITAXIAL NPN TRANSISTOR

SILICONEPITAXIALNPNTRANSISTOR •HermeticTO-18MetalPackage •DesignedForGeneralPurposeAmplifiers,andAudioDriverApplications •ScreeningOptionsAvailable

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

TTELEC

SILICON EPITAXIAL NPN TRANSISTOR

SILICONEPITAXIALNPNTRANSISTOR •HermeticTO-18MetalPackage •DesignedForGeneralPurposeAmplifiers,andAudioDriverApplications •ScreeningOptionsAvailable

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

TTELEC

SILICON EPITAXIAL NPN TRANSISTOR

SILICONEPITAXIALNPNTRANSISTOR •HermeticTO-18MetalPackage •DesignedForGeneralPurposeAmplifiers,andAudioDriverApplications •ScreeningOptionsAvailable

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

TTELEC

NPN SILICON TRANSISTOR

FEATURES •FASTSWITCHING •HIGHPULSEPOWER APPLICATIONS •POWERSWITCHINGCIRCUITS •MOTORCONTROL

SEME-LAB

Seme LAB

SEME-LAB

PNP SILICON TRANSISTOR

FEATURES •FASTSWITCHING •HIGHPULSEPOWER APPLICATIONS •POWERSWITCHINGCIRCUITS •MOTORCONTROL

SEME-LAB

Seme LAB

SEME-LAB

PNP high-voltage transistor

DESCRIPTION PNPhigh-voltagetransistorinaTO-39metalpackage. FEATURES •Lowcurrent(max.500mA) •Highvoltage(max.250V). APPLICATIONS •Highvoltageswitchingandamplification •Industrialandtelephoneapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

N-channel silicon FET

DESCRIPTION Symmetricaln-channelsiliconepitaxialplanarjunctionfield-effecttransistorinamicrominiatureplasticenvelope.Thetransistorisintendedforlowlevelgeneralpurposeamplifiersinthickandthin-filmcircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TO-72

PNPSiliconTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PNP 5 GHz wideband transistor

DESCRIPTION PNPtransistorinaplasticSOT23envelope. ItisprimarilyintendedforuseinRFwidebandamplifiers,suchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzers,etc.Thetransistorfeatureslowintermodulationdistortionandhighpowergain;duetoitsveryhig

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP Silicon RF Transistor

PNPSiliconRFTransistor ●Forbroadbandamplifiersupto2GHzatcollectorcurrentsupto20mA ●Complementarytype:BFR92P(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNPSiliconRFTransistor •Forbroadbandamplifiersupto2GHzatcollectorcurrentsupto20mA •Complementarytype:BFR92P(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNPSiliconRFTransistor •Forbroadbandamplifiersupto2GHz atcollectorcurrentsupto20mA •Complementarytype:BFR92W(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNP 4 GHz wideband transistor

DESCRIPTION SiliconPNPtransistorinaplastic,SOT323(S-mini)package.TheBFT92WusesthesamecrystalastheSOT23version,BFT92. FEATURES •Highpowergain •Goldmetallizationensures excellentreliability •SOT323(S-mini)package. APPLICATION Itisintendedasa

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP 5 GHz wideband transistor

DESCRIPTION PNPtransistorinaplasticSOT23envelope. ItisprimarilyintendedforuseinRFwidebandamplifiers,suchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzers,etc.Thetransistorfeatureslowintermodulationdistortionandhighpowergain;duetoitsveryhig

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)

PNPSiliconRFTransistor •Forlowdistortionbroadbandamplifiersupto1GHzatcollectorcurrentsfrom2mAupto20mA

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP 4 GHz wideband transistor

DESCRIPTION SiliconPNPtransistorinaplastic,SOT323(S-mini)package.TheBFT93WusesthesamecrystalastheSOT23version,BFT93. FEATURES •Highpowergain •Goldmetallizationensuresexcellentreliability •SOT323(S-mini)package. APPLICATIONS Itisintendedasageneralpurpo

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Temperature Sensors

文件:103.22 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:103.22 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:103.32 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:103.12 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:124.05 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:124.06 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:124.06 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:123.94 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:124.07 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:123.94 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.81 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.82 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.81 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.49 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.77 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.45 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.44 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:133.45 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.57 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.66 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.54 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.48 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.45 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:132.45 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:106.61 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

Temperature Sensors

文件:106.18 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

NPN SILICON RF BROADBAND TRANSISTOR

文件:88.21 Kbytes Page:4 Pages

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

NPN 2 GHz wideband transistor

文件:57.37 Kbytes Page:8 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN 2 GHz wideband transistor

文件:57.37 Kbytes Page:8 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN 2 GHz wideband transistor

文件:221.21 Kbytes Page:10 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:RF TRANS NPN 5V 5GHZ TO236AB 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 5 GHz wideband transistor

文件:100.68 Kbytes Page:14 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 5 GHz wideband transistor

文件:146.26 Kbytes Page:15 Pages

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 5 GHz wideband transistor

文件:100.68 Kbytes Page:14 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

BFT产品属性

  • 类型

    描述

  • 型号

    BFT

  • 制造商

    NXP Semiconductors

  • 功能描述

    Bulk

更新时间:2024-6-17 10:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIPS
24+
SOT23
2600
原装现货假一赔十
NXP/恩智浦
23+
SOT23
6000
原装/报价当天为准
NXP/恩智浦
23+
SOT23
50000
全新原装正品现货,支持订货
NXP
23+
SMD
8560
受权代理!全新原装现货特价热卖!
NXP/恩智浦
SOT23
7906200
NXP/恩智浦
24+23+
SOT-23
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
NXP/恩智浦
23+
SOT-23
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
NXP
1742+
SOT23
98215
只要网上有绝对有货!只做原装正品!
只做原装
21+
36520
一级代理/放心采购
NXP/PHILIPS
SOT-23
3000
优势代理渠道,原装正品,可全系列订货开增值税票

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  • SUMIDA
  • TEC

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