NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitter

丝印代码：AMs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with visib

低噪声RF 管基

用于高增益低噪声放大器的 NPN 硅射频晶体管 • 适用于高增益低噪声放大器\n• 噪声系数 F = 1.1 dB (1.8 GHz 时)，Gms = 21 dB (1.8 GHz 时) 非常出色\n• 镀金处理，可靠性高\n• 无铅（符合 RoHS 标准）封装;

丝印代码：AMs；Low Noise Silicon Bipolar RF Transistor

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NPN Silicon RF Transistor

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

NPN Silicon RF Transistor

Product Brief The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition

低噪声RF 管基

低噪声硅双极射频晶体管 • 低噪声高增益硅双极射频晶体管\n• 900 MHz、3 V、4 mA 时最小噪声系数典型值为 0.9 dB\n• 2.4 GHz、4 V、40 mA 时 OIP3 典型值为 28 dBm\n• 广泛应用于分立振荡器\n• （“绿色”）封装，带有可见引线;

For high gain low noise amplifiers

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

Low Noise Silicon Bipolar RF Transistor

文件：567.85 Kbytes Page：9 Pages

封装/外壳：SC-82A，SOT-343 包装：散装 描述：RF TRANS NPN 5V 25GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise Silicon Bipolar RF Transistor

文件：1.54555 Mbytes Page：30 Pages

NPN Silicon RF Transistor

文件：63.27 Kbytes Page：7 Pages

NPN Silicon RF Transistor

文件：63.27 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：1.54555 Mbytes Page：30 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 5.5V 25GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

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