NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitter

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with visib

Low Noise Silicon Bipolar RF Transistor

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低噪声RF 管基

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

NPN Silicon RF Transistor

Product Brief The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition

For high gain low noise amplifiers

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

Low Noise Silicon Bipolar RF Transistor

文件：567.85 Kbytes Page：9 Pages

封装/外壳：SC-82A，SOT-343 包装：散装 描述：RF TRANS NPN 5V 25GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low Noise Silicon Bipolar RF Transistor

文件：1.54555 Mbytes Page：30 Pages

NPN Silicon RF Transistor

文件：63.27 Kbytes Page：7 Pages

低噪声RF 管基

NPN Silicon RF Transistor

文件：63.27 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：1.54555 Mbytes Page：30 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 5.5V 25GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

Supporting the Intel Celeron processor

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Celeron M Processor on 65 nm Process

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420 LED wire-to-board connector

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