NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

NPN Silicon RF Transistor

文件：79.52 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：557.21 Kbytes Page：6 Pages

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz • High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

Low noise silicon bipolar RF transistor

Product description • NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

NPN Silicon RF Transistor

文件：79.52 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：557.21 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：83.26 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：83.26 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 7.5GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

PGA ZIF Test & Burn-in Socket for Any Footprint on Std 8x8 to 21x21 Grid

FEATURES • Strong Metal Cam Activates Normally-closed Contacts, Preventing Dependency on Plastic for Contact Force • Handle mounted on Right- or Left-hand Side • Any Footprint Accepted on Standard 13x13 to 21x21 Grid GENERAL SPECIFICATIONS • SOCKET BODY: black UL 94V-0 Polyphenylene Sulfid

Double Layer Capacitors

FEATURES • Polarized capacitor with high charge density,    alternative product to rechargeable backup    batteries • Dielectric: electric double layer • Radial leads, cylindrical case, insulated with a    blue sleeve • Available in both vertical and low-profile versions • Unlimited charge

MINIATURE FUSES - 5x20mm

文件：87.25 Kbytes Page：2 Pages

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages